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Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their...

IEEE Electron Device Letters 2011 / 05 Vol. 32; Iss. 5

Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

Seonghyun Kim,, Biju, K P, Minseok Jo,, Seungjae Jung,, Jubong Park,, Joonmyoung Lee,, Wootae Lee,, Jungho Shin,, Sangsu Park,, Hyunsang Hwang,
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2114320
Date:
May, 2011
File:
PDF, 364 KB
english, 2011
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