Impact of Oxygen Vacancy Ordering on the Formation of a...

IEEE Electron Device Letters 2011 / 02 Vol. 32; Iss. 2

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

Park, Seong-Geon, Magyari-Kope, Blanka, Nishi, Yoshio
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2091489
Date:
February, 2011
File:
PDF, 522 KB
english, 2011
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