Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer
Donghyun Kim,, Kumar, V., Jaesun Lee,, Minjun Yan,, Dabiran, A.M., Wowchak, A.M., Chow, P.P., Adesida, I.Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2027037
Date:
September, 2009
File:
PDF, 235 KB
english, 2009