Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy
Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., Huang, K. C.Volume:
52
Year:
1988
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.99260
File:
PDF, 571 KB
english, 1988