Volume 52; Issue 11

Applied Physics Letters

Volume 52; Issue 11
1

Gettering of gold and copper with implanted carbon in silicon

Year:
1988
Language:
english
File:
PDF, 533 KB
english, 1988
2

Temperature dependence of electron mobility and peak velocity in compensated GaAs

Year:
1988
Language:
english
File:
PDF, 372 KB
english, 1988
7

Crystallography of phase transition of YBa2Cu3O7−δ

Year:
1988
Language:
english
File:
PDF, 579 KB
english, 1988
9

Solidification mechanisms of laser-annealed thin copper films: Dual phase formation

Year:
1988
Language:
english
File:
PDF, 617 KB
english, 1988
15

Laser-controlled dissociation and ionization pathways in electronically excited AsH3

Year:
1988
Language:
english
File:
PDF, 539 KB
english, 1988
17

Novel high-speed transistor based on charge emission from a quantum well

Year:
1988
Language:
english
File:
PDF, 579 KB
english, 1988
19

Large-area defect-free silicon-on-insulator films by zone-melt recrystallization

Year:
1988
Language:
english
File:
PDF, 597 KB
english, 1988
22

Superconducting Au-YBa2Cu3O7 composites

Year:
1988
Language:
english
File:
PDF, 484 KB
english, 1988
23

Modification of interfacial charge between SiO2 and silicon

Year:
1988
Language:
english
File:
PDF, 551 KB
english, 1988