Ge profile from the growth of SiGe buried layers by...

Applied Physics Letters 1992 Vol. 61; Iss. 18

Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

Godbey, D. J., Ancona, M. G.
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Volume:
61
Year:
1992
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.108272
File:
PDF, 616 KB
english, 1992
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