Enhancement of oxide break-up by implantation of fluorine...

IEEE Electron Device Letters 1994 / 04 Vol. 15; Iss. 4

Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation

Shye Lin Wu,, Chung Len Lee,, Tan Fu Lei,, Chen, C.F., Chen, L.J., Ho, K.Z., Ling, Y.C.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
15
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.285410
Date:
April, 1994
File:
PDF, 194 KB
english, 1994
Conversion to is in progress
Conversion to is failed