Drain-avalanche and hole-trapping induced gate leakage in...

IEEE Electron Device Letters 1988 / 11 Vol. 9; Iss. 11

Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devices

Chang, C., Haddad, S., Swaminathan, B., Lien, J.
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Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.9285
Date:
November, 1988
File:
PDF, 289 KB
english, 1988
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