Time dependent annealing of radiation-induced leakage...

IEEE Transactions on Nuclear Science 1989 / Dec. Vol. 36; Iss. 6

Time dependent annealing of radiation-induced leakage currents in MOS devices

Terrell, J.M., Oldham, T.R., Lelis, A.J., Benedetto, J.M.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.45426
Date:
January, 1989
File:
PDF, 609 KB
english, 1989
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