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Time dependent annealing of radiation-induced leakage currents in MOS devices
Terrell, J.M., Oldham, T.R., Lelis, A.J., Benedetto, J.M.Volume:
36
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.45426
Date:
January, 1989
File:
PDF, 609 KB
english, 1989