Correlation between preirradiation 1/f noise and...

IEEE Transactions on Nuclear Science 1989 / Dec. Vol. 36; Iss. 6

Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Scofield, J.H., Doerr, T.P., Fleetwood, D.M.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.45391
Date:
January, 1989
File:
PDF, 709 KB
english, 1989
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