![](/img/cover-not-exists.png)
Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors
Scofield, J.H., Doerr, T.P., Fleetwood, D.M.Volume:
36
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.45391
Date:
January, 1989
File:
PDF, 709 KB
english, 1989