Modeling of Alpha-Induced Single Event Upsets for 45 nm...

IEEE Transactions on Nuclear Science 2009 / 12 Vol. 56; Iss. 6

Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI Devices Using Realistic C4 and 3D Circuit Geometries

Tang, Henry H. K., Murray, Conal E., Fiorenza, Giovanni, Rodbell, Kenneth P., Heidel, David F.
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Volume:
56
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2009.2033923
Date:
December, 2009
File:
PDF, 353 KB
english, 2009
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