Electrical properties of Ga-implanted Si p/sup +/-n shallow...

IEEE Electron Device Letters 1988 / 11 Vol. 9; Iss. 11

Electrical properties of Ga-implanted Si p/sup +/-n shallow junctions fabricated by low-temperature rapid thermal annealing

Lin, C.-M., Steckl, A.J., Chow, T.P.
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Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.9287
Date:
November, 1988
File:
PDF, 347 KB
english, 1988
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