![](/img/cover-not-exists.png)
30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance
Chang-Geun Ahn,, Won-Ju Cho,, Kiju Im,, Jong-Heon Yang,, In-Bok Baek,, Sungkweon Baek,, Seongjae Lee,Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2005.851183
Date:
July, 2005
File:
PDF, 355 KB
english, 2005