Volume 26; Issue 7

IEEE Electron Device Letters

Volume 26; Issue 7

1

Schottky barrier diodes for millimeter wave detection in a foundry CMOS process

Sankaran, S., O, K.K.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 330 KB

english, 2005

2

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Thomas, S.G., Johnson, E.S., Tracy, C., Maniar, P., Xiuling Li,, Roof, B., Hartmann, Q., Ahmari, D.A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 499 KB

english, 2005

3

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai,, Yugang Zhou,, Chen, K.J., Lau, K.M.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 158 KB

english, 2005

4

Microwave characteristics of liquid-crystal tunable capacitors

Yeh, J.A., Chang, C.A., Chih-Cheng Cheng,, Jing-Yi Huang,, Hsu, S.S.H.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

5

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

Tsai, C.M., Sheu, J.K., Lai, W.C., Hsu, Y.P., Wang, P.T., Kuo, C.T., Kuo, C.W., Chang, S.J., Su, Y.K.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 690 KB

english, 2005

6

Thermoreflectance calibration procedure on a laser diode: application to catastrophic optical facet damage analysis

S. Dilhaire, S. Grauby, W. Claeys

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 161 KB

english, 2005

7

Low noise RF MOSFETs on flexible plastic substrates

H. Kao, A. Chin, B. Hung, C. Lee, J. Lai, S. Mcalister, G. Samudra, Won Jong Yoo, C. Chi

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 337 KB

english, 2005

8

Yanagidaira, K., Saitoh, M., Hiramoto, T.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 140 KB

english, 2005

9

High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate

Watanabe, I., Shinohara, K., Kitada, T., Shimomura, S., Yamashita, Y., Endoh, A., Mimura, T., Matsui, T., Hiyamizu, S.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 195 KB

english, 2005

10

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Zhe Chen,, Prasad, K., Gan, Z.H., Wu, S.Y., Mehta, S.S., Jiang, N., Mhaisalkar, S.G., Kumar, R., Li, C.Y.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 125 KB

english, 2005

11

Improving gate-oxide reliability by TiN capping layer on NiSi FUSI metal gate

Liu, J., Wen, H.C., Lu, J.P., Kwong, D.L.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 236 KB

english, 2005

12

Performance and reliability of poly-Si TFTs on FSG buffer layer

Shen De Wang,, Tzu Yun Chang,, Chao Hsin Chien,, Wei Hsiang Lo,, Jen Yi Sang,, Jam Wen Lee,, Tan Fu Lei,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 209 KB

english, 2005

13

A novel high-performance asymmetric hetero-doped S/D high-voltage MOSFET

Jun Cai,, Harley-Stead, M., Park, S., Woloszyn, J., Gallacher, V.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 162 KB

english, 2005

14

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

Chun San Chu,, Yugang Zhou,, Chen, K.J., Lau, K.M.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

15

Dual high-/spl kappa/ gate dielectric with poly gate electrode: HfSiON on nMOS and Al/sub 2/O/sub 3/ capping layer on pMOS

Hong-Jyh Li,, Gardner, M.I.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 181 KB

english, 2005

16

Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT

Changhwan Choi,, Chang-Yong Kang,, Se Jong Rhee,, Akbar, M.S., Krishnan, S.A., Manhong Zhang,, Hyoung-Sub Kim,, Tackhwi Lee,, Ok, I., Feng Zhu,, Lee, J.C.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 490 KB

english, 2005

17

BV/sub CEO/--BV/sub CBO/ separation and sharpness of breakdown in high-speed bipolar transistors

Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 168 KB

english, 2005

18

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

Balachandran, S., Chow, T.P., Agarwal, A., Scozzie, C., Jones, K.A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 140 KB

english, 2005

19

Experimental measurements of majority and minority carrier lifetime profile in SI epilayers by the use of an improved OCVD method

Bellone, S., Licciardo, G.D., Daliento, S., Mele, L.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 198 KB

english, 2005

20

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

Ching-Huang Lu,, Wong, G.M.T., Deal, M.D., Tsai, W., Majhi, P., Chi On Chui,, Visokay, M.R., Chambers, J.J., Colombo, L., Clemens, B.M., Nishi, Y.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 171 KB

english, 2005

21

A novel GaAs FET with double camel-like gate structure

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 114 KB

english, 2005

22

30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance

Chang-Geun Ahn,, Won-Ju Cho,, Kiju Im,, Jong-Heon Yang,, In-Bok Baek,, Sungkweon Baek,, Seongjae Lee,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 355 KB

english, 2005

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