High-Voltage 4H-SiC PiN Diodes With Etched Junction...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Ghandi, R., Buono, B., Domeij, M., Malm, G., Zetterling, C.-M., Ostling, M.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2030374
Date:
November, 2009
File:
PDF, 282 KB
english, 2009
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