On-Resistance Degradations for Different Stress Conditions...

IEEE Electron Device Letters 2007 / 07 Vol. 28; Iss. 7

On-Resistance Degradations for Different Stress Conditions in High-Voltage pLEDMOS Transistor With Thick Gate Oxide

Weifeng Sun,, Hong Wu,, Longxing Shi,, Yangbo Yi,, Haisong Li,
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.898489
Date:
July, 2007
File:
PDF, 160 KB
english, 2007
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