A 20-nm physical gate length NMOSFET featuring 1.2 nm gate...

IEEE Electron Device Letters 2000 / 04 Vol. 21; Iss. 4

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets

Deleonibus, S., Caillat, C., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Biswas, S., Souil, D.
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Volume:
21
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.830972
Date:
April, 2000
File:
PDF, 298 KB
english, 2000
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