Volume 21; Issue 4

IEEE Electron Device Letters

Volume 21; Issue 4

1

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Laegu Kang,, Byoung Hun Lee,, Wen-Jie Qi,, Yongjoo Jeon,, Nieh, R., Gopalan, S., Onishi, K., Lee, J.C.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 78 KB

english, 2000

2

Bake induced charge gain in NOR flash cells

Fastow, R., Ahmed, K., Haddad, S., Randolph, M., Huster, C., Hom, P.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 60 KB

english, 2000

3

A novel method for a smooth interface at poly-SiOx/SiO2 by employing selective etching

Jae-Hong Jeon,, Juhn-Suk Yoo,, Cheol-Min Park,, Hong-Seok Choi,, Min-Koo Han,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 226 KB

english, 2000

4

Manufacturable GaAs VFET for power switching applications

Eisenbeiser, K., Jenn-Hwa Huang,, Salih, A., Hadizad, P., Pitts, B.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 142 KB

english, 2000

5

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Yan-Kuin Su,, Jia-Rong Chang,, Yan-Ten Lu,, Chuing-Liang Lin,, Kuo-Ming Wu,, Zheng-Xian Wu,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 125 KB

english, 2000

6

Cz bifacial solar cells

del Canizo, C., Moehlecke, A., Zanesco, I., Luque, A.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 45 KB

english, 2000

7

Fabrication and testing of surface micromachined polycrystalline SiC micromotors

Yasseen, A.A., Chien Hung Wu,, Zorman, C.A., Mehregany, M.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 162 KB

english, 2000

8

Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?

Sune, J., Mura, G., Miranda, E.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 52 KB

english, 2000

9

Graded gate VDMOSFET

Shuming Xu,, Kian Paau Can,, Pang Dow Foo,, Yi Su,, Yong Liu,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 235 KB

english, 2000

10

Monte Carlo study of the dynamic breakdown effects in HEMT's

Di Carlo, A., Rossi, L., Lugli, P., Zandler, G., Meneghesso, G., Jackson, M., Zanoni, E.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 88 KB

english, 2000

11

Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

Yee Chia Yee,, Subramanian, V., Kedzierski, J., Peiqi Xuan,, Tsu-Jae King,, Bokor, J., Chenming Hu,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 72 KB

english, 2000

12

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

Zhigang Wang,, Parker, C.G., Hodge, D.W., Croswell, R.T., Nian Yang,, Misra, V., Hauser, J.R.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 75 KB

english, 2000

13

Transistor off-state leakage current induced by TiSi2 pre-amorphizing implant in a 0.20 μm CMOS process

Lutze, J., Scott, G., Manley, M.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 47 KB

english, 2000

14

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets

Deleonibus, S., Caillat, C., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Biswas, S., Souil, D.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 298 KB

english, 2000

15

Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

Royter, Y., Furuta, T., Ksdama, S., Sahri, N., Nagatsuma, T., Ishibashi, T.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 90 KB

english, 2000

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