Analysis of High Leakage Currents in 4H-SiC Schottky...

Materials Science Forum 2002 Vol. 389-393

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Tsuji, Takashi, Izumi, Syunsuke, Ueda, A., Fujisawa, Hiroyuki, Ueno, Katsunori, Tsuchida, Hidekazu, Kamata, Isaho, Jikimoto, Tamotsu, Izumi, Kunikaza
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Volume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.389-393.1141
File:
PDF, 412 KB
2002
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