Volume 389-393

Materials Science Forum

Volume 389-393

1

Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures

Jang, Seong Joo, Song, H.J., Oh, K.Y., Lee, K.H., Lim, Y.J., Cho, Nam Ihn

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 282 KB

2002

2

Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

Barthe, Marie France, Desgardin, P., Henry, L., Corbel, C., Britton, D.T., Kögel, Gottfried, Sperr, Peter, Triftshäuser, Werner, Vicente, Patrice, diCioccio, L.

Journal:

Materials Science Forum

Year:

2002

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PDF, 347 KB

2002

3

Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces

Förster, Christian, Masri, Pierre M., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2002

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PDF, 330 KB

2002

4

Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

Kimoto, Tsunenobu, Nakazawa, S., Fujihira, Keiko, Hirao, T., Nakamura, Shun-ichi, Chen, Yi, Hashimoto, K., Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

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PDF, 557 KB

2002

5

Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

Nakamura, Shun-ichi, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

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PDF, 296 KB

2002

6

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode

Hatakeyama, Tetsuo, Shinohe, Takashi

Journal:

Materials Science Forum

Year:

2002

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PDF, 323 KB

2002

7

A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces

Sieber, N., Seyller, Thomas, Ley, Lothar, Polcik, M., James, D., Riley, J.D., Leckey, R.C.G.

Journal:

Materials Science Forum

Year:

2002

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PDF, 373 KB

2002

8

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

Takahashi, Tetsuo, Ishida, Yuuki, Tsuchida, Hidekazu, Kamata, Isaho, Okumura, Hajime, Yoshida, Sadafumi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

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PDF, 554 KB

2002

9

Theoretical Investigation of an Intrinsic Defect in SiC

Gali, Adam, Deák, Peter, Son, N.T., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

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PDF, 308 KB

2002

10

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Robert, Jean-Louis, Contreras, Sylvie, Camassel, Jean, Pernot, Julien, Juillaguet, Sandrine, Di Cioccio, Lea, Billon, Thierry

Journal:

Materials Science Forum

Year:

2002

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PDF, 329 KB

2002

11

Observation of Planar Defects in 2-inch SiC Wafer

Tanaka, Hideaki, Nishiguchi, Taro, Sasaki, Makato, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

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PDF, 452 KB

2002

12

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Tsuji, Takashi, Izumi, Syunsuke, Ueda, A., Fujisawa, Hiroyuki, Ueno, Katsunori, Tsuchida, Hidekazu, Kamata, Isaho, Jikimoto, Tamotsu, Izumi, Kunikaza

Journal:

Materials Science Forum

Year:

2002

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PDF, 412 KB

2002

13

Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

Kakanakov, Roumen, Kassamakova, Liliana, Hristeva, N., Lepoeva, G., Kuznetsov, N.I., Zekentes, K.

Journal:

Materials Science Forum

Year:

2002

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PDF, 338 KB

2002

14

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma

Kim, Bum Seok, Jeong, Jae Kyeong, Um, Myung Yoon, Na, Hoon Joo, Song, In Bok, Kim, Hyeong Joon

Journal:

Materials Science Forum

Year:

2002

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PDF, 336 KB

2002

15

Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Imaizumi, Masayuki, Tarui, Yoichiro, Sugimoto, Hiroshi, Ohtsuka, Ken Ichi, Takami, Tetsuya, Ozeki, Tatsuo

Journal:

Materials Science Forum

Year:

2002

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PDF, 321 KB

2002

16

Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method

Hirose, Fusao, Kitou, Yasuo, Oyanagi, Naoki, Kato, Tomohisa, Nishizawa, Shinichi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

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PDF, 598 KB

2002

17

Electronic Structure of the UD3 Defect in 4H- and 6H-SiC

Wagner, Matthias, Magnusson, Björn, Chen, W.M., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

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PDF, 292 KB

2002

18

Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

Koo, Sang-Mo, Lee, Sang Kwon, Zetterling, C.M., Östling, Mikael, Forsberg, Urban, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

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PDF, 340 KB

2002

19

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

Yaguchi, Hiroyuki, Narita, K., Hijikata, Yasuto, Yoshida, Sadafumi, Nakashima, Shinichi, Oyanagi, Naoki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 297 KB

2002

20

High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, Takashi, Jimbo, Takashi

Journal:

Materials Science Forum

Year:

2002

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PDF, 301 KB

2002

21

Demonstration of IMPATT Diode Oscillators in 4H-SiC

Yuan, L., Cooper, James A., Webb, Kevin J., Melloch, M.R.

Journal:

Materials Science Forum

Year:

2002

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PDF, 363 KB

2002

22

Sensitive Detection of Defects in α and β SiC by Raman Scattering

Nakashima, Shinichi, Nakatake, Yasuhiro, Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2002

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PDF, 342 KB

2002

23

Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3

Virojanadara, Charíya, Johansson, Leif I.

Journal:

Materials Science Forum

Year:

2002

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PDF, 284 KB

2002

24

Application-Oriented Unipolar Switching SiC Devices

Friedrichs, Peter, Mitlehner, Heinz, Schörner, Reinhold, Dohnke, Karl-Otto, Elpelt, Rudolf, Stephani, Dietrich

Journal:

Materials Science Forum

Year:

2002

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PDF, 492 KB

2002

25

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2002

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PDF, 266 KB

2002

26

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, Johji, Kushibe, Mitsuhiro, Masahara, Koh, Kojima, Kazutoshi, Ohno, Toshiyuki, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadafumi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 289 KB

2002

27

Fabrication of α-SiC Heteroepitaxial Films by YAG-PLAD Method

Muto, Hachizo, Kusumori, Takeshi

Journal:

Materials Science Forum

Year:

2002

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PDF, 299 KB

2002

28

A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Lazar, Mihaï, Raynaud, Christophe, Planson, Dominique, Locatelli, Marie Laure, Isoird, K., Ottaviani, Laurent, Chante, Jean-Pierre, Nipoti, Roberta, Poggi, Antonella, Cardinali, G.C.

Journal:

Materials Science Forum

Year:

2002

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PDF, 345 KB

2002

29

Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC

Choyke, W.J., Devaty, Robert P., Bai, Song, Gali, Adam, Deák, Peter, Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2002

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PDF, 324 KB

2002

30

Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

Domeij, Martin, Brünahl, H., Östling, Mikael

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 370 KB

2002

31

Impact of Material Defects on SiC Schottky Barrier Diodes

Morisette, D.T., Cooper, James A.

Journal:

Materials Science Forum

Year:

2002

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PDF, 274 KB

2002

32

Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Tournier, Dominique, Godignon, Phillippe, Planson, Dominique, Chante, Jean-Pierre, Sarrus, F.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 356 KB

2002

33

Laser Crystallization Mechanism of Amorphous SiC Thin Films

Urban, S., Falk, Fritz, Gorelik, T., Kaiser, Ute

Journal:

Materials Science Forum

Year:

2002

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PDF, 345 KB

2002

34

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Hasegawa, Mitsuru, Miyauchi, Akihiro, Masahara, Koh, Ishida, Yuuki, Takahashi, Tetsuo, Ohno, Toshiyuki, Nishio, Johji, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadafumi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

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PDF, 330 KB

2002

35

In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source

Wang, Rong Jun, Bhat, I., Chow, T.P.

Journal:

Materials Science Forum

Year:

2002

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PDF, 316 KB

2002

36

A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Zhao, Jian H., Li, Larry X., Tone, Kiyoshi, Alexandrov, Petre, Pan, M., Weiner, M.

Journal:

Materials Science Forum

Year:

2002

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PDF, 342 KB

2002

37

Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures

Ikoma, Yoshifumi, Uchiyama, K., Watanabe, Fumio, Motooka, Teruaki

Journal:

Materials Science Forum

Year:

2002

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PDF, 318 KB

2002

38

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Müller, Stephan G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., McD. Hobgood, H., Jenny, Jason R., Leonard, R.T., Malta, D.P., Powell, Adrian R., Tsvetkov, Valeri F., Allen, S.T

Journal:

Materials Science Forum

Year:

2002

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PDF, 417 KB

2002

39

Observation of 2in SiC Wafer by SWBXT at SPring-8

Sasaki, Makato, Hirai, Akira, Miyanagi, Toshiyuki, Furusho, Tomoaki, Nishiguchi, Taro, Shiomi, Hiromu, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

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PDF, 402 KB

2002

40

Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

Fujimaki, Makato, Ono, Rudi, Kushibe, Mitsuhiro, Masahara, Koh, Kojima, Kazutoshi, Shinohe, Takashi, Okushi, Hideyo, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

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PDF, 298 KB

2002

41

The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction

Wagner, Matthias, Thinh, N.Q., Son, N.T., Baranov, P.G., Mokhov, E.N., Hallin, Christer, Chen, W.M., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

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PDF, 316 KB

2002

42

Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Shigiltchoff, O., Kimoto, Tsunenobu, McD. Hobgood, H., Neudeck, Philip G., Porter, L.M., Devaty, Robert P., Choyke, W.J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 373 KB

2002

43

Electronic Localization around Stacking Faults in Silicon Carbide

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 288 KB

2002

44

Hydrogen Incorporation into SiC Using Plasma-Hydrogenation

Koshka, Yaroslav, Draper, W.A., Lakshman, R.Y., Scofield, James D., Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2002

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PDF, 311 KB

2002

45

Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Sghaier, N., Bluet, Jean Marie, Souifi, A., Guillot, Gérard, Morvan, Erwan, Brylinski, C.

Journal:

Materials Science Forum

Year:

2002

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PDF, 357 KB

2002

46

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC

Han, Sang Youn, Kim, Nam Kyun, Kim, Eun Dong, Lee, Jong Lam

Journal:

Materials Science Forum

Year:

2002

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PDF, 313 KB

2002

47

Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs

Chatty, K., Banerjee, S., Chow, T.P., Gutmann, Ronald J.

Journal:

Materials Science Forum

Year:

2002

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PDF, 302 KB

2002

48

High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy

Konstantinov, Andrey O., Harris, Chris I., Ericsson, Per

Journal:

Materials Science Forum

Year:

2002

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PDF, 352 KB

2002

49

Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC

Nakamura, Hiroki, Watanabe, H., Yamazaki, J., Tanaka, Nobuo, Malhan, Rajesh Kumar

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 399 KB

2002

50

Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Pernot, Etienne, Anikin, Mikhail, Pons, Michel, Chaix-Pluchery, O., Baillet, Francis, Matko, Igor, Madar, Roland

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 362 KB

2002

51

4H-SiC MESFET Large-Signal Modeling Using Modified Materka Model

Lee, Soo Woong, Song, Nam Jin, Burm, Jinwook, An, Chul

Journal:

Materials Science Forum

Year:

2002

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PDF, 298 KB

2002

52

The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide

Sanchez, Edward M., Kopec, A., Poplawski, S., Ware, R., Holmes, S.N., Wang, Shao Ping, Timmerman, A.G.

Journal:

Materials Science Forum

Year:

2002

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PDF, 412 KB

2002

53

Lateral Enlargement of Silicon Carbide Crystals

Jacobsson, Henrik, Yakimova, Rositza, Råback, P., Syväjärvi, Mikael, Birch, Jens, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 419 KB

2002

54

'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging

Wellmann, Peter J., Herro, Z.G., Straubinger, Thomas L., Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 343 KB

2002

55

Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination

Templier, Francois, Ferret, Pierre, Di Cioccio, Lea, Collard, Emmanuel, Lhorte, André, Billon, Thierry

Journal:

Materials Science Forum

Year:

2002

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PDF, 463 KB

2002

56

Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Senzaki, Junji, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Fukuda, Kenji, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

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PDF, 293 KB

2002

57

Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC

Grillenberger, Joachim, Achtziger, N., Pasold, G., Witthuhn, W.

Journal:

Materials Science Forum

Year:

2002

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PDF, 348 KB

2002

58

Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission Gun

Bae, In-Tae, Ishimaru, Manabu, Hirotsu, Yoshihiko

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 335 KB

2002

59

Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface

Hatakeyama, Tetsuo, Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Fukuda, Kenji, Shinohe, Takashi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 285 KB

2002

60

Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates

Chen, Yi, Kimoto, Tsunenobu, Takeuchi, Yuuichi, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

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PDF, 352 KB

2002

61

Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide

Korolkov, Oleg, Rang, T.

Journal:

Materials Science Forum

Year:

2002

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PDF, 355 KB

2002

62

Silicon Carbide Buffer Layers for Nitride Growth on Si

Masri, Pierre M., Herro, Z.G., Stauden, Thomas, Pezoldt, Jörg, Sumiya, M., Averous, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 336 KB

2002

63

Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Danielsson, Örjan, Jönsson, S., Henry, Anne, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

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PDF, 427 KB

2002

64

Ultrafast Electron Relaxation Processes in SiC

Tomita, Takuro, Saito, S., Suemoto, T., Harima, Hiroshi, Nakashima, Shinichi

Journal:

Materials Science Forum

Year:

2002

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PDF, 331 KB

2002

65

Oxidation of Silicon Carbide: Problems and Solutions

Afanas'ev, Valery V., Bassler, M., Pensl, Gerhard, Stesmans, Andre

Journal:

Materials Science Forum

Year:

2002

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PDF, 522 KB

2002

66

Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC

Koshka, Yaroslav, Melnychuck, Galyna

Journal:

Materials Science Forum

Year:

2002

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PDF, 355 KB

2002

67

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC

Malhan, Rajesh Kumar, Kozima, J., Yamamoto, Tetsuya, Fukumoto, A.

Journal:

Materials Science Forum

Year:

2002

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PDF, 507 KB

2002

68

Masking Process for High-Energy and High-Temperature Ion Implantation

Ohyanagi, Takasumi, Onose, Hidekatsu, Watanabe, Atsuo, Someya, Tomoyuki, Ohno, Toshiyuki, Amemiya, Kensuke, Kobayashi, Yutaka

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 269 KB

2002

69

Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT

Tang, Yi, Chow, T.P., Agarwal, Anant, Ryu, Sei Hyung, Palmour, John W.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 227 KB

2002

70

AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

Yoshida, Seikoh, Ishii, Hirotatsu, Li, Jiang

Journal:

Materials Science Forum

Year:

2002

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PDF, 326 KB

2002

71

4H- to 3C-SiC Polytypic Transformation during Oxidation

Okojie, Robert S., Xhang, Ming, Pirouz, P., Tumakha, Sergey P., Jessen, Gregg, Brillson, Leonard J.

Journal:

Materials Science Forum

Year:

2002

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PDF, 383 KB

2002

72

A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability

Dahlquist, Fanny, Lendenmann, H., Östling, Mikael

Journal:

Materials Science Forum

Year:

2002

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PDF, 347 KB

2002

73

The Brittle-to-Ductile Transition in 4H-SiC

Zhang, M., McD. Hobgood, H., Demenet, J.L., Pirouz, P.

Journal:

Materials Science Forum

Year:

2002

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PDF, 330 KB

2002

74

Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Raineri, Vito, Giannazzo, Filippo, Calcagno, Lucia, Musumeci, Paolo, Roccaforte, Fabrizio, La Via, Francesco

Journal:

Materials Science Forum

Year:

2002

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PDF, 368 KB

2002

75

Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces

Abe, Koji, Sumitomo, M., Sumi, T., Eryu, Osamu, Nakashima, Kenshiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 303 KB

2002

76

Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes

Bergman, J. Peder, Pozina, G.R., Monemar, Bo, Kamiyama, Satoshi, Iwaya, Motoaki, Amano, Hiroshi, Akasaki, Isamu

Journal:

Materials Science Forum

Year:

2002

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PDF, 324 KB

2002

77

Theoretical Studies of Vanadium Impurity in β-SiC

Tairov, Yuri M., Reshanov, Sergey A., Parfenova, I.I., Yuryeva, E.I., Ivanovskii, A.L.

Journal:

Materials Science Forum

Year:

2002

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PDF, 323 KB

2002

78

The Deep Boron Level in High-Voltage PiN Diodes

Stadler, W., Hallén, Anders, Österman, John, Zimmermann, Uwe, Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 343 KB

2002

79

Codoping of 4H-SiC with N- and P-Donors by Ion Implantation

Laube, Michael, Schmid, Frank, Pensl, Gerhard, Wagner, Günter

Journal:

Materials Science Forum

Year:

2002

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PDF, 317 KB

2002

80

Properties of the UD-1 Deep-Level Center in 4H-SiC

Magnusson, Björn, Ellison, Alexsandre, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

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PDF, 271 KB

2002

81

Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace

Hirai, Seisaku, Jobe, Fumihiko, Nakao, Motoi, Izumi, Katsutoshi

Journal:

Materials Science Forum

Year:

2002

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PDF, 400 KB

2002

82

Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum

Grivickas, Paulius, Grivickas, Vytautas, Galeckas, Augustinas, Linnros, Jan

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 363 KB

2002

83

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

Okui, Yoichi, Jacob, Chacko, Ohshima, Satoru, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 377 KB

2002

84

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, Junji, Fukuda, Kenji, Kojima, Kazutoshi, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Suzuki, Takaya, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 297 KB

2002

85

Radiation-Induced Defects in p-Type Silicon Carbide

Kanazawa, S., Okada, M., Nozaki, T., Shin, K., Ishihara, S., Kimura, I.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

86

4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW

Alexandrov, Petre, Wright, B., Pan, M., Weiner, M., Fursin, Leonid, Zhao, Jian H.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 343 KB

2002

87

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, Mrinal K., Chung, G.Y., Williams, John R., Saks, N.S., Lipkin, Lori A., Palmour, John W.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 316 KB

2002

88

Aluminum and Boron Diffusion into (1-100) Face SiC Substrates

Soloviev, Stanislav I., Gao, Ying, Khlebnikov, Yuri I., Khlebnikov, I.I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 252 KB

2002

89

SIMS Analyses of SiO2/4H-SiC(0001) Interface

Yamashita, Kenya, Kitabatake, Makoto, Kusumoto, Osamu, Takahashi, Kunimasa, Uchida, Masao, Miyanaga, Ryouko, Itoh, Hisayoshi, Yoshikawa, Masahito

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 304 KB

2002

90

Titanium-Based Ohmic Contact on p-Type 4H-SiC

Jung, K.H., Cho, Nam Ihn, Lee, J.H., Yang, Shou Jie, Kim, C.K., Lee, Byung Teak, Rim, Kyung Hwa, Kim, Nam Kyun, Kim, Eun Dong

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 335 KB

2002

91

Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes

Fujisawa, Hiroyuki, Tsuji, Takashi, Izumi, Syunsuke, Ueno, Katsunori, Kamata, Isaho, Tsuchida, T., Jikimoto, Tamotsu, Izumi, Kunikaza

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 317 KB

2002

92

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC

Satoh, Masataka

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 415 KB

2002

93

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

Nilsson, H.-E., Englund, U., Hjelm, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 312 KB

2002

94

Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide

Weber, William J., Gao, Fei, Jiang, Weilin, Devanathan, Ram

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 360 KB

2002

95

Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum

Ohi, Akihiko, Ohshima, Takeshi, Yoshikawa, Masahito, Lee, Kin Kiong, Iwami, Motohiro, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 316 KB

2002

96

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Ohno, Toshiyuki, Yamaguchi, Hirotaka, Kojima, Kazutoshi, Nishio, Johji, Masahara, Koh, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 666 KB

2002

97

Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

Vicente, Patrice, Pernot, Etienne, Chaussende, Didier, Camassel, Jean

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 329 KB

2002

98

Electrical Properties of Neutron-Irradiated Silicon Carbide

Kanazawa, S., Okada, M., Ishii, J., Nozaki, T., Shin, K., Ishihara, S., Kimura, I.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 284 KB

2002

99

Oxidation of Porous 4H-SiC Substrates

Soloviev, Stanislav I., Das, Taniya, Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 234 KB

2002

100

Carbon Interstitials in SiC: A Model for the DII Center

Mattausch, Alexander, Bockstedte, M., Pankratov, Oleg

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 344 KB

2002

101

Growth and Evaluation of High Quality SiC Crystal by Sublimation Method

Oyanagi, Naoki, Yamaguchi, Hirotaka, Kato, Tomohisa, Nishizawa, Shinichi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 322 KB

2002

102

Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiC

Lee, Jong Wook, Webb, Kevin J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 287 KB

2002

103

Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density

Syrkin, Alexander, Dmitriev, Vladimir, Yakimova, Rositza, Henry, Anne, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 286 KB

2002

104

Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System

Miyanagi, Toshiyuki, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 517 KB

2002

105

Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap

Jones, Kenneth A., Shah, Pankaj B., Derenge, Michael A., Ervin, Matthew H., Gerardi, G.J., Freitas, Jaime A., Braga, G.C.B., Vispute, R.D., Sharma, R.P., Holland, O.W.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 339 KB

2002

106

Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation

Okuno, Eiichi, Amano, Shinji

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 306 KB

2002

107

Electrical Activity of Residual Boron in Silicon Carbide

Storasta, L., Bergman, J. Peder, Janzén, Erik, Hallin, Christer

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 331 KB

2002

108

Gallium Nitride Power Device Design Tradeoffs

Matocha, Kevin, Chow, T.P., Gutmann, Ronald J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 287 KB

2002

109

Characterisation and Defects in Silicon Carbide

Bergman, J. Peder, Jakobsson, H., Storasta, L., Carlsson, F.H.C., Magnusson, Björn, Sridhara, S.G., Pozina, G.R., Lendenmann, H., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 634 KB

2002

110

Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

Zhang, Jie, Forsberg, Urban, Isacson, M., Ellison, Alexsandre, Henry, Anne, Kordina, Olle, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 401 KB

2002

111

2 kV 4H-SiC Junction FETs

Onose, Hidekatsu, Watanabe, Atsuo, Someya, Tomoyuki, Kobayashi, Yutaka

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 286 KB

2002

112

Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry

Shimizu, Hideki, Ohba, Takaomi, Hisada, Kensaku

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 322 KB

2002

113

Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor

Wang, Rong Jun, Bhat, I., Chow, T.P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 356 KB

2002

114

A 600 V SiC Trench JFET

Gupta, R.N., Chang, H.R., Hanna, E., Bui, C.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 334 KB

2002

115

Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides

Matocha, Kevin, Chow, T.P., Gutmann, Ronald J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 274 KB

2002

116

Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates

Nishiguchi, Taro, Masuda, Yasuichi, Ohshima, Satoru, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 476 KB

2002

117

Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

Maeyama, Yusuke, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi, Shirafuji, T.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 347 KB

2002

118

Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography

Dudley, Michael, Vetter, William M., Huang, X., Neudeck, Philip G., Powell, J. Anthony

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 449 KB

2002

119

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Shimoida, Yoshio, Kaneko, Saichirou, Tanaka, Hideaki, Hoshi, Masakatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 314 KB

2002

120

All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Luo, Yan Bin, Fursin, Leonid, Zhao, Jian H., Alexandrov, Petre, Wright, B., Weiner, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

121

Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals

Wollweber, Jürgen, Rost, H. J., Schulz, D., Siche, D.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 334 KB

2002

122

Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

Yasui, Kanji, Hashiba, Masahiro, Narita, Yuzuru, Akahane, Tadashi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 330 KB

2002

123

Super-Junction Device Forward Characteristics and Switched Power Limitations

Adachi, Kazuhiro, Johnson, C. Mark, Ohashi, Hiromichi, Shinohe, Takashi, Kinoshita, Kozo, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 334 KB

2002

124

Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiC

Ohsato, Hitoshi, Wada, Keiji, Kato, Tomohisa, Sun, C.J., Razeghi, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 354 KB

2002

125

Demonstration of 4H-SiC Avalanche Photodiode Linear Array

Yan, Feng, Qin, C., Zhao, Jian H., Bush, M., Olsen, G.H.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 317 KB

2002

126

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Kalinina, Evgenia V., Kholuyanov, G., Gol'dberg, Yu., Blank, T., Onushkin, G., Strel'chuk, Anatoly M., Violina, G., Kossov, V., Yafaev, R., Hallén, Anders, Konstantinov, Andrey O.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 311 KB

2002

127

Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor

Bai, Song, Wagner, Günter, Shishkin, E., Choyke, W.J., Devaty, Robert P., Zhang, M., Pirouz, P., Kimoto, Tsunenobu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

128

Reduction of Macrodefects in Bulk SiC Single Crystals

Balkas, Cengiz M., Maltsev, Andrei A., Roth, Matthew D., Heydemann, V.D., Sharma, Mrityunjay, Yushin, Nikolay K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 421 KB

2002

129

Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space

Morisette, D.T., Cooper, James A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 305 KB

2002

130

An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors

Brezeanu, G., Badila, M., Godignon, Phillippe, Millán, José, Udrea, F., Mihaila, Andrej, Amaratunga, G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 337 KB

2002

131

Oxidation States Present on SiC (0001) after Oxygen Exposure

Virojanadara, Charíya, Johansson, Leif I.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 325 KB

2002

132

Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range

Peters, Dethard, Friedrichs, Peter, Schörner, Reinhold, Stephani, Dietrich

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 299 KB

2002

133

Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC

Mitra, S., Tucker, Jesse B., Rao, Mulpuri V., Papanicolaou, N., Jones, Kenneth A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 319 KB

2002

134

Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

Tajima, Michio, Tanaka, M., Hoshino, Norihiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 365 KB

2002

135

Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force Microscopy

Yahata, Akihiro, Zhang, Li, Shinohe, Takashi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 407 KB

2002

136

Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature

Schneider, Konrad, Helbig, Reinhard

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 290 KB

2002

137

Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle Precursor

Yamada, Yoshimitsu, Sagawa, Kazukiyo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 359 KB

2002

138

The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

Sankin, V.I., Shkrebiy, P.P., Kuznetsov, Alexey N., Savkina, N.S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 312 KB

2002

139

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance

Son, N.T., Hallin, Christer, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 351 KB

2002

140

Self-Healing Phenomenon of Micropipes in Silicon Carbide

Okamoto, Atsuto, Seno, Yoshiki, Sugiyama, Naohiro, Hirose, Fusao, Hara, Kazukuni, Tani, Toshihiko, Nakamura, Daisuke, Kamiya, Nobuo, Onda, Shoichi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 497 KB

2002

141

UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

Masarotto, L., Bluet, Jean Marie, Guillot, Gérard

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 372 KB

2002

142

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Kojima, Kazutoshi, Ohno, Toshiyuki, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Kushibe, Mitsuhiro, Masahara, Koh, Ishida, Yuuki, Yoshida, Sadafumi, Suzuki, Takaya, Takahashi, Tets

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

143

Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor

Zhu, Lin, Chow, T.P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 305 KB

2002

144

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

Neudeck, Philip G., Powell, J. Anthony, Trunek, Andrew J., Huang, X., Dudley, Michael

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 474 KB

2002

145

Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces

Neudeck, Philip G., Powell, J. Anthony, Trunek, Andrew J., Spry, David J., Beheim, Glenn M., Benavage, Emye, Abel, Phillip B., Vetter, William M., Dudley, Michael

Journal:

Materials Science Forum

Year:

2002

Language:

english

File:

PDF, 583 KB

english, 2002

146

Abnormal Hysteresis Property of SiC Oxide C-V Characteristics

Choi, Jae Seung, Lee, Weon Seon, Shin, Dong Hyun, Lee, Hyung Gyoo, Kim, Yeong Seuk, Park, Keun Hyung

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 309 KB

2002

147

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Yuuki, Kushibe, Mitsuhiro, Takahashi, Tetsuo, Okumura, Hajime, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 319 KB

2002

148

High-Performance UMOSFETs in 4H-SiC

Li, Y., Cooper, James A., Capano, Michael A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 328 KB

2002

149

Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide

Pham, Hoa Thi Mai, de Boer, Charles R., Pakula, Lukasz, Sarro, Pasqualina M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 456 KB

2002

150

A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers

Ha, Seo Young, Vetter, William M., Dudley, Michael, Skowronski, Marek

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

151

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

Lendenmann, H., Dahlquist, Fanny, Bergman, J. Peder, Bleichner, H., Hallin, Christer

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 483 KB

2002

152

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Masahara, Koh, Takahashi, Tetsuo, Kushibe, Mitsuhiro, Ohno, Takaya, Nishio, Johji, Kojima, Kazutoshi, Ishida, Yuuki, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadafumi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 314 KB

2002

153

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

Ivanov, Alexandr M., Strokan, Nikita B., Lebedev, A.A., Davydov, D.V., Savkina, N.S., Bogdanova, E.V.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 268 KB

2002

154

A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth

Oyanagi, Naoki, Nishizawa, Shinichi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 714 KB

2002

155

Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC

Nipoti, Roberta, Parisini, A., Poggi, Antonella

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 396 KB

2002

156

The Development of 4H-SiC {03-38} Wafers

Nakayama, Koji, Miyanagi, Youichi, Shiomi, Hiromu, Nishino, Shigehiro, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 402 KB

2002

157

Damage Evolution and Recovery in Al-Implanted 4H-SiC

Zhang, Yu Long, Weber, William J., Jiang, Weilin, Hallén, Anders, Possnert, G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 330 KB

2002

158

Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method

Straubinger, Thomas L., Bickermann, Matthias, Rasp, Michael, Weingärtner, Roland, Wellmann, Peter J., Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 313 KB

2002

159

Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer

Bahng, Wook, Kim, Nam Kyun, Kim, Sang Cheol, Song, Geun Ho, Kim, Eun Dong

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

160

Surface Morphology of GaN Epilayer with SixN1-x Buffer Layer Grown by Ammonia-source MBE

Shimizu, Mitsuaki, Ohkita, H., Suzuki, Akira, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 328 KB

2002

161

Study of SiC PiN Diodes Subjected to High Current Density Pulses

Hillkirk, Leonardo M., Bakowski, Mietek

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 379 KB

2002

162

Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si Substrates

Yamada, Toshimichi, Itoh, Kohei M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 308 KB

2002

163

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Ivanov, I.G., Zhang, Jie, Storasta, L., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 367 KB

2002

164

Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method

Sasaki, Makato, Miyanagi, Youichi, Nakayama, Koji, Shiomi, Hiromu, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 341 KB

2002

165

Reaction Mechanism of the Carbonization Process by Low-Energy Ion Subplantation

Tsubouchi, Nobuteru, Chayahara, Akiyoshi, Mokuno, Yoshiaki, Kinomura, Atsushi, Horino, Yuji

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 296 KB

2002

166

Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth

Nishizawa, Shinichi, Kato, Tomohisa, Kitou, Yasuo, Oyanagi, Naoki, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 433 KB

2002

167

Growth of Epitaxial (SiC)x(AlN)1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition

Tungasmita, Sukkaneste, Persson, P.O.Å., Seppänen, T., Hultman, L., Birch, Jens

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 405 KB

2002

168

Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process

Kang, Soo Chang, Shin, Moo Whan

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 460 KB

2002

169

4H-SiC Schottky Diodes with High On/Off Current Ratio

Vassilevski, Konstantin V., Horsfall, A.B., Johnson, C. Mark, Wright, Nicolas G., O'Neill, Anthony G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 384 KB

2002

170

4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

Wahab, Qamar-ul, Kosugi, Hajime, Yano, Hiroshi, Hallin, Christer, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 332 KB

2002

171

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Ohtsuka, Ken Ichi, Sugimoto, Hiroshi, Kinouchi, Shin Ichi, Tarui, Yoichiro, Imaizumi, Masayuki, Takami, Tetsuya, Ozeki, Tatsuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

172

Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer

Nakazawa, Hideki, Suemitsu, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

173

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, Rudi, Fujimaki, Makato, Senzaki, Junji, Tanimoto, Satoshi, Shinohe, Takashi, Okushi, Hideyo, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 328 KB

2002

174

Growth and Defect Reduction of Bulk SiC Crystals

Ohtani, Noboru, Fujimoto, Tatsuo, Katsuno, Masakazu, Aigo, Takashi, Yashiro, Hirokatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 514 KB

2002

175

Infrared Investigation of Implantation Damage in 6H-SiC

Camassel, Jean, Wang, Huiyao, Pernot, Julien, Godignon, Phillippe, Mestres, Narcis, Pascual, Jordi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 316 KB

2002

176

Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation

Kato, Masashi, Ichimura, Masaya, Arai, Eisuke

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 318 KB

2002

177

Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis

Los, A.V., Mazzola, Michael S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 380 KB

2002

178

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices

Tanimoto, Satoshi, Kiritani, Norihiko, Hoshi, Masakatsu, Okushi, Hideyo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 566 KB

2002

179

Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation

Schöner, Adolf, Konstantinov, Andrey O., Karlsson, S., Berge, R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 472 KB

2002

180

The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity

Miyanagi, Youichi, Nakayama, Koji, Shiomi, Hiromu, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 314 KB

2002

181

SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)

Kusumoto, Osamu, Yokogawa, Toshiya, Yamashita, Kenya, Takahashi, Kunimasa, Kitabatake, Makoto, Uchida, Masao, Miyanaga, Ryouko

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 318 KB

2002

182

Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC

Liu, Jin Qiang, Sanchez, Edward M., Skowronski, Marek

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 313 KB

2002

183

Resistivity Mapping of Semi-Insulating 6H-SiC Wafers

Roth, Matthew D., Heydemann, V.D., Mitchel, W.C., Yushin, Nikolay K., Sharma, M., Wang, Shao Ping, Balkas, Cengiz M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 481 KB

2002

184

4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

Kaneko, Saichirou, Tanaka, Hideaki, Shimoida, Yoshio, Kiritani, Norihiko, Tanimoto, Satoshi, Yamanaka, Mitsugu, Hoshi, Masakatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 321 KB

2002

185

Flux-Controlled Sublimation Growth by an Inner Guide-Tube

Kitou, Yasuo, Bahng, Wook, Kato, Tomohisa, Nishizawa, Shinichi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 522 KB

2002

186

Scanning Acoustic Microscopy in Porous SiC

Ostapenko, Sergei S., Smith, M.C.D., Tarasov, I., Wolan, J.T., Mynbaeva, M.G., Goings, J., McKeon, J.C.P., Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 442 KB

2002

187

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Chatty, K., Banerjee, S., Chow, T.P., Gutmann, Ronald J., Arnold, Emil, Alok, Dev

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 306 KB

2002

188

4H-SiC MOSFETs on (03-38) Face

Hirao, T., Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Shiomi, Hiromu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 317 KB

2002

189

Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

Skromme, B.J., Palle, K., Poweleit, C.D., Bryant, L.R., Vetter, William M., Dudley, Michael, Moore, K., Gehoski, T.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 389 KB

2002

190

Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC

Liu, Jin Qiang, Sanchez, Edward M., Skowronski, Marek

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 365 KB

2002

191

Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile Approach

Park, Jeong, Lee, Chin C., Kim, Jong Wook, Lee, Jae Seung, Lee, Won Sang, Shin, Jin-Ho, Shin, Moo Whan

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 1.89 MB

2002

192

In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces

Jikimoto, Tamotsu, Tsuchida, Hidekazu, Kamata, Isaho, Izumi, Kunikaza

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 319 KB

2002

193

Growth and Characterization of Three-Dimensional SiC Nanostructures on Si

Cimalla, Volker, Zekentes, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 314 KB

2002

194

The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Jikimoto, Tamotsu, Tsuchida, Hidekazu, Yoshikawa, Masahito, Tomioka, Yuichi, Midorikawa, M., Hijikata, Yasuto, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 355 KB

2002

195

A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination

Yan, Feng, Qin, C., Zhao, Jian H., Weiner, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 428 KB

2002

196

RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy

Shen, Xu-Qiang, Ide, Toshihide, Shimizu, Mitsuaki, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 349 KB

2002

197

Full Si Wafer Conversion into Bulk 3C-SiC

Leycuras, André, Tottereau, Olivier, Vicente, Patrice, Falkovsky, L.A., Girard, P., Camassel, Jean

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 406 KB

2002

198

Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers

Ishida, Yuuki, Kushibe, Mitsuhiro, Takahashi, Tetsuo, Okumura, Hajime, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 349 KB

2002

199

Optical Characterization of Ion-Implanted 4H-SiC

Feng, Zhe Chuan, Yan, Feng, Chang, W.Y., Zhao, Jian H., Lin, Jian Yi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 323 KB

2002

200

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Harada, Shinsuke, Suzuki, Seiji, Senzaki, Junji, Kosugi, Ryouji, Adachi, Kazuhiro, Fukuda, Kenji, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 315 KB

2002

201

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality

Epelbaum, Boris M., Hofmann, Dieter, Bickermann, Matthias, Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 405 KB

2002

202

Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC

Tang, Yi, Fedison, Jeffery B., Chow, T.P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 277 KB

2002

203

N2O Processing Improves the 4H-SiC:SiO2 Interface

Lipkin, Lori A., Das, Mrinal K., Palmour, John W.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 312 KB

2002

204

Silicon Carbide Technology in New Era

Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 422 KB

2002

205

Influence of the Crystal Thickness on the SiC PVT Growth Rate

Cherednichenko, Dimitri I., Khlebnikov, Yuri I., Drachev, Roman, Khlebnikov, I.I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 323 KB

2002

206

Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes

Galeckas, Augustinas, Linnros, Jan, Breitholtz, Bo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 378 KB

2002

207

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Horsfall, A.B., Vassilevski, Konstantin V., Johnson, C. Mark, Wright, Nicolas G., O'Neill, Anthony G., Gwilliam, Russell

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 357 KB

2002

208

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Chassagne, Thierry, Ferro, Gabriel, Wang, Huiyao, Stoimenos, Y., Peyre, Hervé, Contreras, Sylvie, Camassel, Jean, Monteil, Yves, Ghyselen, B.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 342 KB

2002

209

Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Na, Hoon Joo, Kim, Hyeong Joon, Adachi, Kazuhiro, Kiritani, Norihiko, Tanimoto, Satoshi, Okushi, Hideyo, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 298 KB

2002

210

Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes

Rost, H. J., Doerschel, J., Schulz, D., Siche, D., Wollweber, Jürgen

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 366 KB

2002

211

CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC

Nakatsuka, Osamu, Koide, Yasuo, Murakami, Masanori

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 288 KB

2002

212

Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy

Henry, Anne, Ellison, Alexsandre, Forsberg, Urban, Magnusson, Björn, Pozina, G.R., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 334 KB

2002

213

Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals

Saddow, Stephen E., Elkington, Troy, Smith, M.C.D.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 507 KB

2002

214

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Furusho, Tomoaki, Miyanagi, Toshiyuki, Okui, Yoichi, Ohshima, Satoru, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 382 KB

2002

215

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Negoro, Yuki, Miyamoto, Nao, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 345 KB

2002

216

The Effect of Epitaxial Growth on Warp of SiC Wafers

Nakayama, Koji, Miyanagi, Youichi, Maruyama, K., Okamoto, Yoshihiro, Shiomi, Hiromu, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 295 KB

2002

217

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Wagner, Günter, Leitenberger, W., Irmscher, K., Schmid, Frank, Laube, Michael, Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 303 KB

2002

218

Growth-Induced Structural Defects in SiC PVT Boules

Skowronski, Marek

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 527 KB

2002

219

In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Weih, Petia, Stauden, Thomas, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 335 KB

2002

220

Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC

Aradi, B., Gali, Adam, Deák, Peter, Son, N.T., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 326 KB

2002

221

Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization

Masuda, Makoto, Mabuchi, Hiroshi, Tsuda, H., Matsui, T., Morii, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 362 KB

2002

222

Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8

Sasaki, Makato, Hirai, Akira, Miyanagi, Toshiyuki, Furusho, Tomoaki, Nishiguchi, Taro, Shiomi, Hiromu, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 451 KB

2002

223

Hot-Carrier Luminescence in 4H-SiC MESFETs

Banc, C., Bano, Edwige, Ouisse, Thierry, Noblanc, Olivier, Brylinski, C.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 291 KB

2002

224

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, Seo Young, Mieszkowski, P., Rowland, L.B., Skowronski, Marek

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 391 KB

2002

225

Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

Tsuchida, Hidekazu, Kamata, Isaho, Jikimoto, Tamotsu, Izumi, Kunikaza

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 331 KB

2002

226

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, Uwe, Österman, John, Zhang, Jie, Henry, Anne, Hallén, Anders

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

227

Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

Fukuda, Yusuke, Nishikawa, Kouichi, Shimizu, Masaaki, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 286 KB

2002

228

Micropipe Formation Model via Surface Step Interaction

Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Aigo, Takashi, Yashiro, Hirokatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 326 KB

2002

229

Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening Technique

Rempel, Al., Blaurock, K., Reichle, K.J., Sprengel, W., Schaefer, Hans Eckhardt

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 354 KB

2002

230

Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication

Godignon, Phillippe, Jordà, Xavier, Nipoti, Roberta, Cardinali, G.C., Mestres, Narcis

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 323 KB

2002

231

Structural Defects in Electrically Degraded 4H-SiC PiN Diodes

Persson, P.O.Å., Molina-Aldareguia, J.M., Jacobsson, Henrik, Bergman, J. Peder, Tuomi, T.O., Clegg, W.J., Janzén, Erik, Hultman, L.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 499 KB

2002

232

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 326 KB

2002

233

ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface

Isoya, J., Kosugi, Ryouji, Fukuda, Kenji, Yamasaki, Satoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 308 KB

2002

234

Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD

Fujihira, Keiko, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 338 KB

2002

235

Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Kato, Tomohisa, Oyanagi, Naoki, Kitou, Yasuo, Nishizawa, Shinichi, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 428 KB

2002

236

Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

Nakamura, Tomonori, Matsumoto, Seiken, Horibe, Tatsunobu, Satoh, Masataka

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 320 KB

2002

237

Advances in SiC Materials and Technology for Schottky Diode Applications

Di Cioccio, Lea, Billon, Thierry

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 490 KB

2002

238

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

Singh, Ranbir, Irvine, Kenneth G., Richmond, James, Palmour, John W.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 333 KB

2002

239

4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

Fujimoto, Tatsuo, Katsuno, Masakazu, Ohtani, Noboru, Aigo, Takashi, Yashiro, Hirokatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 360 KB

2002

240

Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Roccaforte, Fabrizio, La Via, Francesco, Raineri, Vito, Musumeci, Paolo, Calcagno, Lucia

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 329 KB

2002

241

Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC

Asaoka, Yasushi, Hiramoto, M., Sano, Nao Yuki, Kaneko, Tsutommu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 476 KB

2002

242

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Tournier, Dominique, Godignon, Phillippe, Montserrat, Josep, Planson, Dominique, Chante, Jean-Pierre, Sarrus, F.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 366 KB

2002

243

Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

Syrkin, Alexander, Dmitriev, Vladimir, Kovalenkov, O., Bauman, D., Crofton, John

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 520 KB

2002

244

Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD

Takahashi, Kunimasa, Uchida, Masao, Yokogawa, Toshiya, Kusumoto, Osamu, Yamashita, Kenya, Miyanaga, Ryouko, Kitabatake, Makoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 352 KB

2002

245

Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3x√3-R30°

Aoyama, Tomohiro, Hisada, Yoshiyuki, Mukainakano, Shinichi, Ichimiya, Ayahiko

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 322 KB

2002

246

Raman Scattering from Wurtzite GaN Bulk Crystal

Verma, Prabhat, Yamada, A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 313 KB

2002

247

Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC

Koshka, Yaroslav, Mazzola, Michael S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 372 KB

2002

248

Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated Circuits

Udrea, F., Mihaila, Andrej, Azar, R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 371 KB

2002

249

Low-Temperature Preparation of α-SiC Epitaxial Films by Nd: YAG Pulsed-Laser Deposition

Kusumori, Takeshi, Muto, Hachizo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 329 KB

2002

250

Physics of Heteroepitaxy and Heterophases

Masri, Pierre M., Pezoldt, Jörg, Sumiya, M., Averous, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 310 KB

2002

251

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Jeong, Jae Kyeong, Um, Myung Yoon, Na, Hoon Joo, Kim, Bum Seok, Song, In Bok, Kim, Hyeong Joon

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 361 KB

2002

252

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Ólafsson, H.Ö., Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 338 KB

2002

253

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, Jun, Nakamura, Shun-ichi, Miura, Mineo, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 329 KB

2002

254

Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure

Kakanakova-Georgieva, A., Forsberg, Urban, Magnusson, Björn, Yakimova, Rositza, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 433 KB

2002

255

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Lebedev, A.A., Strel'chuk, Anatoly M., Davydov, D.V., Savkina, N.S., Tregubova, A.S., Kuznetsov, Alexey N., Soloviev, V.A., Poletaev, N.K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 291 KB

2002

256

Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth

Linnarsson, Margareta K., Forsberg, Urban, Janson, Martin S., Janzén, Erik, Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 310 KB

2002

257

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

Kosugi, Ryouji, Okamoto, Mitsuo, Suzuki, Seiji, Senzaki, Junji, Harada, Shinsuke, Fukuda, Kenji, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 297 KB

2002

258

On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals

Bickermann, Matthias, Hofmann, Dieter, Straubinger, Thomas L., Weingärtner, Roland, Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 413 KB

2002

259

Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth

Bickermann, Matthias, Weingärtner, Roland, Hofmann, Dieter, Straubinger, Thomas L., Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 370 KB

2002

260

3C-SiC Growth on 6H-SiC (0001) Substrates

Matko, Igor, Chenevier, Bernard, Audier, M., Madar, Roland, Diani, M., Simon, L., Kubler, L., Aubel, D.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 391 KB

2002

261

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000ºC by Microwave Plasma Chemical Vapor Deposition

Okamoto, Mitsuo, Tanaka, Yasunori, Kosugi, Ryouji, Takeuchi, Daisuke, Nakashima, Shinichi, Nishizawa, Shinichi, Fukuda, Kenji, Okushi, Hideyo, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 431 KB

2002

262

Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

Herzog, B., Rohmfeld, S., Püsche, Roland, Hundhausen, Martin, Ley, Lothar, Semmelroth, Kurt, Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 309 KB

2002

263

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Mihaila, Andrej, Udrea, F., Azar, R., Brezeanu, G., Amaratunga, G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 346 KB

2002

264

Opportunities and Technical Strategies for Silicon Carbide Device Development

Cooper, James A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 478 KB

2002

265

A Raman Study of Metal-SiC Interface Reactions

Kurimoto, Eiji, Harima, Hiroshi, Toda, Tadao, Sawada, Minoru, Nakashima, Shinichi, Iwami, Motohiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

266

Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications

Miyamoto, Hironobu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 395 KB

2002

267

Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Phelps, G.J., Wright, Nicolas G., Chester, E.G., Johnson, C. Mark, O'Neill, Anthony G., Ortolland, S., Horsfall, A.B., Vassilevski, Konstantin V., Gwilliam, Russell

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 344 KB

2002

268

Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

Ohno, Toshiyuki, Amemiya, Kensuke

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 398 KB

2002

269

Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography

Pernot, Etienne, Neyret, E., Moulin, Cécile, Pernot-Rejmánková, Petra, Templier, Francois, Di Cioccio, Lea, Billon, Thierry, Madar, Roland

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 569 KB

2002

270

Silicon Carbide Microwave Limiters

Syrkin, Alexander, Dmitriev, Vladimir, Lapidus, A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 312 KB

2002

271

On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Li, Larry X., Luo, Yan Bin, Zhao, Jian H., Alexandrov, Petre, Pan, M., Weiner, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 336 KB

2002

272

Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Kassamakova, Liliana, Kakanakov, Roumen, Yakimova, Rositza, Kakanakova-Georgieva, A., Syväjärvi, Mikael, Wilzén, L., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 339 KB

2002

273

Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry

Tomioka, Yuichi, Iida, T., Midorikawa, M., Tukada, H., Yoshimoto, K., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Ishida, Yuuki, Kosugi, Ryouji, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 349 KB

2002

274

Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining

Song, Xiao Yan, Rajgopal, Srihari, Melzak, J.M., Zorman, Christian A., Mehregany, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 456 KB

2002

275

Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC

Katsuno, Masakazu, Ohtani, Noboru, Fujimoto, Tatsuo, Aigo, Takashi, Yashiro, Hirokatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 323 KB

2002

276

Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions

Nakagomi, Shinji, Shinobu, Hiroaki, Unéus, Lars, Lundström, Ingemar, Ekedahl, Lars-G., Yakimova, Rositza, Syväjärvi, Mikael, Henry, Anne, Janzén, Erik, Lloyd Spetz, Anita

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 374 KB

2002

277

High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations

Morisette, D.T., Cooper, James A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 325 KB

2002

278

Passivation of the Oxide/4H-SiC Interface

Jamet, Philippe, Dimitrijev, Sima, Tanner, P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 331 KB

2002

279

Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations

Weissker, Hans-Christian, Furthmüller, J., Bechstedt, Friedhelm

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 339 KB

2002

280

Atomic-Scale Passivation of Silicon Carbide Surfaces

Soukiassian, P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 539 KB

2002

281

TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth

Sorokin, L.M., Hutchison, John L., Sloan, Jeremy, Mosina, G.N., Savkina, N.S., Shuman, V.B., Lebedev, A.A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 479 KB

2002

282

Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique

Furusho, Tomoaki, Ohshima, Satoru, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 361 KB

2002

283

Wet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEED

Sieber, N., Seyller, Thomas, Graupner, R., Ley, Lothar, Mikalo, R.P., Hoffmann, P., Batchelor, D.R., Schmeisser, D.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 394 KB

2002

284

Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers

Hatayama, Tomoaki, Kawahito, Kazuaki, Kijima, Hiroshi, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2002

Language:

english

File:

PDF, 342 KB

english, 2002

285

Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy

Österman, John, Anand, Srinivasan, Linnarsson, Margareta K., Hallén, Anders

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 341 KB

2002

286

Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Lee, Kin Kiong, Ohshima, Takeshi, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 334 KB

2002

287

Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts

Litvinov, V.L., Demakov, K.D., Agueev, Oleg A., Svetlichnyi, Alexander M., Konakova, Raisa V., Lytvyn, Petr M., Milenin, Victor V.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 285 KB

2002

288

Development and Demonstration of High-Power X-Band SiC MESFETs

Chang, H.R., Hanna, E., Hacker, J., Hackett, R., Bui, C.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 307 KB

2002

289

TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

Adachi, Kazuhiro, Johnson, C. Mark, Arai, Kazuo, Fukuda, Kenji, Harada, Shinsuke, Shinohe, Takashi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 315 KB

2002

290

A New Type of SiC Gas Sensor with a pn-Junction Structure

Nakashima, Kenshiro, Okuyama, Yasuo, Ando, Shinji, Eryu, Osamu, Abe, Koji, Yokoi, H., Oshima, T.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 343 KB

2002

291

Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Williams, John R., Chung, G.Y., Tin, Chin Che, McDonald, K., Farmer, D., Chanana, R.K., Weller, Robert A., Pantelides, Sokrates T., Holland, O.W., Das, Mrinal K., Feldman, Leonard C.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 442 KB

2002

292

Realization of a High-Current and Low RON 600V Current-Limiting Device

Nallet, F., Godignon, Phillippe, Planson, Dominique, Raynaud, Christophe, Chante, Jean-Pierre

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 307 KB

2002

293

Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations

Jonsson, Rolf, Eriksson, Joakim, Wahab, Qamar-ul, Rudner, Staffan, Rorsman, Niklas, Zirath, Herbert, Svensson, C.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 355 KB

2002

294

New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 351 KB

2002

295

Ab Initio Calculations of B Diffusion in SiC

Rurali, Riccardo, Hernández, E., Godignon, Phillippe, Rebollo, Jose, Ordejón, P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 324 KB

2002

296

Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide

Lee, Sang Kwon, Zetterling, C.M., Östling, Mikael, Fusegawa, I., Magnusson, M.H., Deppert, K., Wernersson, L.-E., Samuelson, L., Litwin, A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 344 KB

2002

297

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Nakamura, Shun-ichi, Kumagai, Hironori, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 332 KB

2002

298

Behavior of Micropipes during Growth in 4H-SiC

Vouroutzis, N., Yakimova, Rositza, Syväjärvi, Mikael, Jacobsson, Henrik, Stoemenos, J., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 391 KB

2002

299

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Nakashima, Shinichi, Nakatake, Yasuhiro, Yano, Y., Harima, Hiroshi, Ohtani, Noboru, Katsuno, Masakazu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 296 KB

2002

300

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K., Lazar, Mihaï, Locatelli, Marie Laure, Raynaud, Christophe, Planson, Dominique, Chante, Jean-Pierre

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 351 KB

2002

301

Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

Krafcsik, Olga H., Vida, György, Josepovits, V. Katalin, Deák, Peter, Radnóczi, György Z., Pécz, Béla, Bársony, István

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 313 KB

2002

302

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Lu, C.Y., Cooper, James A., Chung, G.Y., Williams, John R., McDonald, K., Feldman, Leonard C.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 315 KB

2002

303

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryouji, Senzaki, Junji, Fukuda, Kenji

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 313 KB

2002

304

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Negoro, Yuki, Miyamoto, Nao, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

305

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 309 KB

2002

306

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, Michel, Mezière, Jérôme, Kuan, Stephane Wan Tang, Blanquet, Elisabeth, Ferret, Pierre, Di Cioccio, Lea, Billon, Thierry, Madar, Roland

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

307

Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray Characterization

Dorozhkin, Sergey I., Lebedev, Andrew O., Maximov, Andrew Yu., Tairov, Yuri M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 418 KB

2002

308

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Felsl, Hans Peter, Wachutka, G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 357 KB

2002

309

Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters

Forsberg, Urban, Danielsson, Örjan, Henry, Anne, Linnarsson, Margareta K., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 328 KB

2002

310

A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Li, Larry X., Fursin, Leonid, Zhao, Jian H., Alexandrov, Petre, Pan, M., Weiner, M., Burke, Terry, Khalil, G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

311

Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC

Nipoti, Roberta, Carnera, A., Raineri, Vito

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 328 KB

2002

312

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Kojima, Kazutoshi, Ohno, Takaya, Senzaki, Junji, Fukuda, Kenji, Fujimoto, Tatsuo, Katsuno, Masakazu, Ohtani, Noboru, Nishio, Johji, Masahara, Koh, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tan

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 408 KB

2002

313

Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers

Bakin, Andrey S., Behrens, I., Ivanov, A.A., Peiner, E., Piester, D., Wehmann, H.-H., Schlachetzki, A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 429 KB

2002

314

RHEED: A Tool for Structural Investigations of Thin Polytypic SiC Layers

Scharmann, F., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 325 KB

2002

315

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

Agarwal, Anant, Ivanov, Pavel A., Levinshtein, Michael E., Palmour, John W., Rumyantsev, Sergey L.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 298 KB

2002

316

Unipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation Study

Bakowski, Mietek, Gustafsson, U.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 334 KB

2002

317

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

Mizuochi, Norikazu, Isoya, J., Yamasaki, Satoshi, Takizawa, H., Morishita, Norio, Ohshima, Takeshi, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 332 KB

2002

318

Range Distributions of Implanted Ions in Silicon Carbide

Janson, Martin S., Linnarsson, Margareta K., Hallén, Anders, Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 347 KB

2002

319

CVD SiC Powder for High-Purity SiC Source Material

Ezaki, Sashiro, Saito, M., Ishino, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 325 KB

2002

320

Towards Quantum Structures in SiC

Bechstedt, Friedhelm, Fissel, Andreas, Grossner, Ulrike, Kaiser, Ute, Weissker, Hans-Christian, Wesch, Werner

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 449 KB

2002

321

In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth

Zhang, Jie, Kordina, Olle, Ellison, Alexsandre, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 318 KB

2002

322

GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

Mastro, M.A., Kryliouk, Olga, Dann, T., Anderson, T.J., Nikolaev, A.E., Melnik, Yu.V., Dmitriev, Vladimir

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 331 KB

2002

323

Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation

Okojie, Robert S., Lukco, Dorothy, Keys, Luann, Tumakha, Sergey P., Brillson, Leonard J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 408 KB

2002

324

Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique

Takahashi, Kunimasa, Yokogawa, Toshiya, Uchida, Masao, Kusumoto, Osamu, Yamashita, Kenya, Miyanaga, Ryouko, Kitabatake, Makoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 299 KB

2002

325

NiSi2 Ohmic Contact to n-Type 4H-SiC

Nakamura, Tomonori, Satoh, Masataka

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 328 KB

2002

326

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Ryu, Sei Hyung, Agarwal, Anant, Richmond, James, Das, Mrinal K., Lipkin, Lori A., Palmour, John W., Saks, N.S., Williams, John R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 335 KB

2002

327

4H-SiC Delta-Doped Accumulation-Channel MOS FET

Yokogawa, Toshiya, Takahashi, Kunimasa, Kusumoto, Osamu, Uchida, Masao, Yamashita, Kenya, Kitabatake, Makoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 330 KB

2002

328

Electrical Characteristics of Al+ Ion-Implanted 4H-SiC

Tanaka, Hideaki, Tanimoto, Satoshi, Yamanaka, Mitsugu, Hoshi, Masakatsu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 386 KB

2002

329

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Kamata, Isaho, Tsuchida, Hidekazu, Jikimoto, Tamotsu, Izumi, Kunikaza

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 372 KB

2002

330

Photoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well Structures

Lu, Chien-Rong, Lee, Jia Ren, Chen, Yo-Yu, Lee, Wei I, Lee, Shih-Chang

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 295 KB

2002

331

Plasma Oxidation of SiC at Low Temperatures (below 300ºC)

Satoh, Masataka, Shimada, Hisanori, Nakamura, Tomonori, Nagamoto, Naoshi, Yanagihara, Sachiko

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 325 KB

2002

332

MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications

Lloyd Spetz, Anita, Unéus, Lars, Svenningstorp, Henrik, Wingbrant, H., Harris, Chris I., Salomonsson, P., Tengström, P., Mårtensson, P., Ljung, P., Mattsson, M., Visser, J.H., Ejakov, S.G., Kubinski,

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 381 KB

2002

333

Surface Control of 4H-SiC MESFETs

Hilton, Keith P., Uren, Michael J., Hayes, D.G., Johnson, H.K., Wilding, P.J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 316 KB

2002

334

The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates

Nishiguchi, Taro, Masuda, Yasuichi, Ohshima, Satoru, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 664 KB

2002

335

Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H2O2 Solution as Electrolytes

Song, Jung Gyun, Shin, Moo Whan

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 314 KB

2002

336

Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation

Agueev, Oleg A., Svetlichnyi, Alexander M., Razgonov, Roman N.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 251 KB

2002

337

Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor

Ide, Toshihide, Shimizu, Mitsuaki, Suzuki, Akira, Shen, Xu-Qiang, Okumura, Hajime, Nemoto, Toshio

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 300 KB

2002

338

Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Wang, Shao Ping, Sanchez, Edward M., Kopec, A., Poplawski, S., Ware, R., Holmes, S.N., Balkas, Cengiz M., Timmerman, A.G.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 381 KB

2002

339

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Yoshikawa, Masahito, Satoh, Mirei, Ohshima, Takeshi, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 340 KB

2002

340

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates

Nagasawa, Hiroyuki, Kawahara, Takamitsu, Yagi, Kuniaki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 417 KB

2002

341

Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

Kuznetsov, N.I., Bauman, D., Gavrilin, A., Kalinina, Evgenia V.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

342

Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

Danielsson, Erik, Zetterling, C.M., Östling, Mikael, Forsberg, Urban, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 423 KB

2002

343

Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET

Arai, Manabu, Honda, Hirotake, Ogata, Makoto, Sawazaki, Hiroshi, Ono, Shuichi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 279 KB

2002

344

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

Unéus, Lars, Nakagomi, Shinji, Linnarsson, Margareta K., Janson, Martin S., Svensson, Bengt G., Yakimova, Rositza, Syväjärvi, Mikael, Henry, Anne, Janzén, Erik, Ekedahl, Lars-G., Lundström, Ingemar, L

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 344 KB

2002

345

Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE

Teraguchi, Nobuaki, Suzuki, Akira, Nanishi, Y.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 313 KB

2002

346

Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques

Kakanakova-Georgieva, A., Yakimova, Rositza, Zhang, Jie, Storasta, L., Syväjärvi, Mikael, Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 343 KB

2002

347

Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

Sartel, C., Soulière, Veronique, Dazord, Jacques, Monteil, Yves, El Harrouni, I., Bluet, Jean Marie, Guillot, Gérard

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 307 KB

2002

348

Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers

Ferro, Gabriel, Chaussende, Didier, Cauwet, François, Monteil, Yves

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 426 KB

2002

349

SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC

Jacquier, Christophe, Ferro, Gabriel, Cauwet, François, Monteil, Yves

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 389 KB

2002

350

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Kawasuso, Atsuo, Weidner, Michael, Redmann, F., Frank, Thomas, Krause-Rehberg, R., Pensl, Gerhard, Sperr, Peter, Triftshäuser, Werner, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 317 KB

2002

351

New and Improved Quantitative Characterization of SiC Using SIMS

Wang, Larry, Sams, David B., Wang, Alice, Park, Byoung Suk

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 289 KB

2002

352

Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC

Matsuura, Hideharu

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 322 KB

2002

353

Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides

Masri, Pierre M., Pezoldt, Jörg, Sumiya, M., Averous, M.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 351 KB

2002

354

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC

Schmid, Frank, Laube, Michael, Pensl, Gerhard, Wagner, Günter, Maier, Manfred

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 308 KB

2002

355

Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC

Eryu, Osamu, Matsuo, Daisuke, Abe, Koji, Nakashima, Kenshiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 227 KB

2002

356

Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing

Wang, Xie Wen, Bu, H.M., Laube, B.L., Caragianis-Broadbridge, C., Ma, T.P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 354 KB

2002

357

Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes

Liu, Jin Qiang, Skowronski, Marek, Hallin, Christer, Söderholm, R., Lendenmann, H.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 380 KB

2002

358

4H-SiC IMPATT Diode Fabrication and Testing

Vassilevski, Konstantin V., Zorenko, A.V., Zekentes, K., Tsagaraki, Katerina, Bano, Edwige, Banc, C., Lebedev, A.A.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 606 KB

2002

359

5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2

Sugawara, Yoshitaka, Asano, Katsunori, Takayama, Daisuke, Ryu, S., Singh, R., Palmour, John W., Hayashi, Toshihiko

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 317 KB

2002

360

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers

Yakimova, Rositza, Jacobsson, Henrik, Syväjärvi, Mikael, Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, Charíya, Johansson, Leif I., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 438 KB

2002

361

In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD

Sun, Guo Sheng, Luo, M.C., Wang, Lei, Zhu, S.R., Li, Jin Min, Zeng, Yi Ping, Lin, L.Y.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 320 KB

2002

362

The Nature and Diffusion of Intrinsic Point Defects in SiC

Bockstedte, M., Heid, Matthias, Mattausch, Alexander, Pankratov, Oleg

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 537 KB

2002

363

Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Tanaka, Yasunori, Tanoue, Hisao, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 346 KB

2002

364

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Fukuda, Kenji, Senzaki, Junji, Kushibe, Mitsuhiro, Kojima, Kazutoshi, Kosugi, Ryouji, Suzuki, Seiji, Harada, Shinsuke, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 318 KB

2002

365

Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE

Onojima, Norio, Suda, Jun, Matsunami, Hiroyuki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 327 KB

2002

366

QuaSiC Smart-Cut

Letertre, Fabrice, Jalaguier, E., Di Cioccio, Lea, Templier, Francois, Bluet, Jean Marie, Banc, C., Matko, Igor, Chenevier, Bernard, Bano, Edwige, Guillot, Gérard, Billon, Thierry, Aspar, B., Madar, R

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 339 KB

2002

367

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

Stahlbush, Robert E., Fedison, Jeffery B., Arthur, Steve, Rowland, L.B., Kretchmer, James W., Wang, Shao Ping

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 411 KB

2002

368

Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime

Banc, C., Bano, Edwige, Ouisse, Thierry, Vassilevski, Konstantin V., Zekentes, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 320 KB

2002

369

Photoemission Electron Imaging of Transition Metal (Ti, Ni) Surfaces on Si and SiC

Labis, Joselito, Kamezawa, Chihiro, Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 512 KB

2002

370

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Ohshima, Takeshi, Lee, Kin Kiong, Ohi, Akihiko, Yoshikawa, Masahito, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 343 KB

2002

371

Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact

Chen, Yigang, Hasegawa, Mitsuru, Yamanaka, S., Okushi, Hideyo, Kobayashi, Naoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 333 KB

2002

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