Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy
T.S. Lay, Y.Y. Liao, W.H. Hung, M. Hong, J. Kwo, J.P. MannaertsVolume:
278
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2004.12.128
File:
PDF, 262 KB
english, 2005