Volume 278; Issue 1-4

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Journal of Crystal Growth
Volume 278; Issue 1-4

Journal of Crystal Growth

Volume 278; Issue 1-4

1

Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors

M. Walther, J. Schmitz, R. Rehm, S. Kopta, F. Fuchs, J. Fleißner, W. Cabanski, J. Ziegler

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 264 KB

english, 2005

2

SiGe quantum cascade structures for light emitting devices

J. Zhang, X.B. Li, J.H. Neave, D.J. Norris, A.G. Cullis, R.W. Kelsall, S. Lynch, P. Towsend, D.J. Paul, P.F. Fewster

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 439 KB

english, 2005

3

Pyramids and domes in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems

G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, G. Katsaros, R. Songmuang, O.G. Schmidt, H. v. Känel, K. Kern

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 488 KB

english, 2005

4

Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0 0 0 1)

T. Ive, O. Brandt, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 287 KB

english, 2005

5

InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

S.E. Hooper, M. Kauer, V. Bousquet, K. Johnson, C. Zellweger, J. Heffernan

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 212 KB

english, 2005

6

The opportunities, successes and challenges for GaInNAsSb

James S. Harris Jr.

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 622 KB

english, 2005

7

MBE growth and properties of epitaxial metal oxides for high- dielectrics

H. Jörg Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 199 KB

english, 2005

8

Defect-free 50-layer strain-balanced InAs quantum dots grown on InAlGaAs/InP for infrared photodetector applications

Z.H. Zhang, C.F. Xu, K.C. Hsieh, K.Y. Cheng

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

9

Indium segregation during multilayer InAs/GaAs(0 0 1) quantum dot formation

P. Howe, E.C. Le Ru, R. Murray, T.S. Jones

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 181 KB

english, 2005

10

PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T. Matsuura, T. Miyamoto, M. Ohta, Y. Matsui, T. Furuhata, F. Koyama

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 271 KB

english, 2005

11

Intermixing in self-assembled InAs quantum dot formation

Ch. Heyn, A. Bolz, T. Maltezopoulos, R.L. Johnson, W. Hansen

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

12

InAs/InP quantum dots emitting in the wavelength region by inserting ultrathin GaAs and GaP interlayers

Q. Gong, R. Nötzel, P.J. van Veldhoven, J.H. Wolter

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 299 KB

english, 2005

13

Thermal annealing effects and local atomic configurations in GaInNAs thin films

Kazuyuki Uno, Masako Yamada, Ichiro Tanaka, Osamu Ohtsuki, Toshiyuki Takizawa

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

14

Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures

R. Hey, Y.-J. Han, M. Giehler, M. Ramsteiner, H.T. Grahn, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 326 KB

english, 2005

15

Low threshold InGaAsN/GaAs lasers beyond 1500 nm

G. Jaschke, R. Averbeck, L. Geelhaar, H. Riechert

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

16

Nitrogen plasma optimization for high-quality dilute nitrides

Mark A. Wistey, Seth R. Bank, Homan B. Yuen, Hopil Bae, James S. Harris Jr.

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 189 KB

english, 2005

17

Raman scattering in AlAs/GaP and AlAs/AlP strained short-period superlattices

Masahiro Nagano, Ryuichi Sugie

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 202 KB

english, 2005

18

Daily calibration of InAs growth rates using pyrometry

I. Farrer, D.A. Ritchie

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 281 KB

english, 2005

19

Surface diffusion during layer growth of SrTiO3 films with pulsed laser molecular beam epitaxy

Y.R. Li, S.W. Jiang, Y. Zhang, X.W. Deng, X.H. Wei

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 177 KB

english, 2005

20

First-principles investigations of surface reconstructions of an InAs(1 1 1)B surface

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 310 KB

english, 2005

21

Ordering of self-assembled islands on vicinal Si(0 0 1) substrates

H. Lichtenberger, M. Mühlberger, C. Schelling, F. Schäffler

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 425 KB

english, 2005

22

Excitation power dependent photoluminescence of In0.7Ga0.3As1−xNx quantum dots grown on GaAs (0 0 1)

A. Nishikawa, R. Katayama, K. Onabe, Y.G. Hong, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 246 KB

english, 2005

23

InGaAsN on GaAs (1 1 1)B for telecommunication laser application

J. Miguel-Sánchez, A. Guzmán, J.M. Ulloa, A. Hierro, E. Muñoz

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 182 KB

english, 2005

24

Dilute nitride absorbers in passive devices for mode locking of solid-state lasers

S. Schön, A. Rutz, V. Liverini, R. Grange, M. Haiml, S.C. Zeller, U. Keller

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 266 KB

english, 2005

25

Growth of InP high electron mobility transistor structures with Te doping

Brian R. Bennett, Tetsuya Suemitsu, Niamh Waldron, Jesús A. del Alamo

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 234 KB

english, 2005

26

Photoreflectance investigations of HEMT structures grown by MBE

L. Zamora-Peredo, M. López-López, A. Lastras-Martínez, V.H. Méndez-García

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

27

Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

T. Mozume, J. Kasai

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

28

A possibility of In–N fragments incorporation in InGaAsN MBE growth

T. Yamaguchi, M. Uchida, A. Yamamoto, A. Hashimoto

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

29

Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

J. Kasai, T. Mozume

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 280 KB

english, 2005

30

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

31

Continuous-wave operation quantum cascade lasers at 7.95 μm

G.Y. Xu, A.Z. Li, Y.G. Zhang, H. Li

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 288 KB

english, 2005

32

Transport properties of InSb and InAs thin films on GaAs substrates

Atsushi Okamoto, Hirotaka Geka, Ichiro Shibasaki, Kazuo Yoshida

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 225 KB

english, 2005

33

Spintronics: recent progress and tomorrow's challenges

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 721 KB

english, 2005

34

Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP

H. Bando, M. Kosuge, K. Ban, H. Yoshino, R. Takahashi, H. Okamoto, T. Okuno, Y. Masumoto

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 261 KB

english, 2005

35

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

X.Y. Liu, J.F. Fälth, T.G. Andersson, P. Holmström, P. Jänes, U. Ekenberg, L. Thylén

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 340 KB

english, 2005

36

Electrical properties of InAs thin films grown directly on GaAs(1 0 0) substrates by MBE

Hirotaka Geka, Ichiro Shibasaki, Atsushi Okamoto

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 196 KB

english, 2005

37

Mechanical and optical characteristics of Al-doped C60 films

Jiro Nishinaga, Tomoyuki Aihara, Hiroshi Yamagata, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

38

Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1)—structure and electrical properties

C.P. Chen, M. Hong, J. Kwo, H.M. Cheng, Y.L. Huang, S.Y. Lin, J. Chi, H.Y. Lee, Y.F. Hsieh, J.P. Mannaerts

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 259 KB

english, 2005

39

RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0 0 1) substrate using Ge–buffer layer

K. Minami, J. Jogo, Y. Morishita, T. Ishibashi, K. Sato

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 409 KB

english, 2005

40

Thermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures

I.K. Sou, C. Wang, S.K. Chan, G.K.L. Wong

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 252 KB

english, 2005

41

Surface modification of Si substrates by CdF2 molecular beam for stable growth of fluoride ultra-thin heterostructures

Motoki Maeda, Joji Omae, So Watanabe, Yohei Toriumi, Kazuo Tsutsui

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 449 KB

english, 2005

42

The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE

Ichiro Shibasaki, Hirotaka Geka, Atsushi Okamoto, Yosihiko Shibata

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 180 KB

english, 2005

43

MBE growth optimization of Sb-based interband cascade lasers

Cory J. Hill, Rui Q. Yang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 370 KB

english, 2005

44

Heat management of MBE-grown antimonide lasers

C. Zhu, Y.G. Zhang, A.Z. Li, Y.L. Zheng, T. Tang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 215 KB

english, 2005

45

Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers

S.V. Ivanov, A.N. Semenov, V.A. Solov’ev, O.G. Lyublinskaya, Ya.V. Terent’ev, B.Ya. Meltser, L.G. Prokopova, A.A. Sitnikova, A.A. Usikova, A.A. Toropov, P.S. Kop’ev

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 241 KB

english, 2005

46

Ordering of quantum dot molecules by self-organization

T.v. Lippen, R. Nötzel, G.J. Hamhuis, J.H. Wolter

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 420 KB

english, 2005

47

Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy

J. Ibáñez, K.W. Edmonds, M. Henini, L. Eaves, D. Pastor, R. Cuscó, L. Artús, H. Akinaga

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 188 KB

english, 2005

48

Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

Y.Q. Wei, S.M. Wang, X.D. Wang, Q.X. Zhao, M. Sadeghi, I. Tångring, A. Larsson

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

49

Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

Koji Onomitsu, Hideo Fukui, Takashi Maeda, Yoshiro Hirayama, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 184 KB

english, 2005

50

Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions

S. Höfling, R. Kallweit, J. Seufert, J. Koeth, J.P. Reithmaier, A. Forchel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

51

Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector

A. Vainionpää, S. Suomalainen, A. Isomäki, O. Tengvall, M. Pessa, O.G. Okhotnikov

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 226 KB

english, 2005

52

Low threshold distribution feedback quantum cascade lasers at 7.6 μm grown by gas source molecular beam epitaxy

A.Z. Li, G.Y. Xu, Y.G. Zhang, H. Li, X. Zhang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 249 KB

english, 2005

53

Comparison of strain-compensated quantum cascade lasers grown with GaInAs and InP waveguides

Gerhard Boehm, Andrea Friedrich, Giuseppe Scarpa, Ralf Meyer, Markus-Christian Amann

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 273 KB

english, 2005

54

Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

T.S. Lay, E.Y. Lin, C.Y. Chang, K.M. Kong, L.P. Chen, T.Y. Chang, J.S. Wang, G. Lin, J.Y. Chi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 227 KB

english, 2005

55

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 192 KB

english, 2005

56

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1−yAs/GaAs1−x Sbx)/GaAs bilayer quantum wells

Z.C. Niu, X.H. Xu, H.Q. Ni, Y.Q. Xu, Z.H. He, Q. Han, R.H. Wu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 281 KB

english, 2005

57

STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates

T. Noda, N. Sumida, S. Koshiba, S. Nishioka, Y. Negi, E. Okunishi, Y. Akiyama, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 512 KB

english, 2005

58

Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two-dimensional electron gases

F. Capotondi, G. Biasiol, D. Ercolani, L. Sorba

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 300 KB

english, 2005

59

GaAs facet formation and progression during MBE overgrowth of patterned mesas

P. Atkinson, D.A. Ritchie

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 319 KB

english, 2005

60

Phosphorus-mediated growth of Ge quantum dots on Si(0 0 1)

J. Qin, F. Xue, Y. Wang, L.H. Bai, J. Cui, X.J. Yang, Y.L. Fan, Z.M. Jiang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 326 KB

english, 2005

61

Near-infrared gain in GaSb quantum dots in Si grown by MBE

M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto, S. Fukatsu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

62

MBE-grown Au-island-catalyzed ZnSe nanowires

S.K. Chan, Y. Cai, I.K. Sou, N. Wang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 300 KB

english, 2005

63

Chirped multiple InAs quantum dot structure for wide spectrum device applications

L.H. Li, M. Rossetti, A. Fiore

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 218 KB

english, 2005

64

Molecular beam epitaxy of p-type cubic GaMnN layers

C.T. Foxon, S.V. Novikov, L.X. Zhao, K.W. Edmonds, A.D. Giddings, K.Y. Wang, R.P. Campion, C.R. Staddon, M.W. Fay, Y. Han, P.D. Brown, M. Sawicki, B.L. Gallagher

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 198 KB

english, 2005

65

Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system

M. Reinwald, U. Wurstbauer, M. Döppe, W. Kipferl, K. Wagenhuber, H.-P. Tranitz, D. Weiss, W. Wegscheider

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 233 KB

english, 2005

66

Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE

Yukiko Shimizu, Naoto Kobayashi, Akira Uedono, Yoshitaka Okada

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 215 KB

english, 2005

67

Hall electron mobility versus N spatial distribution in III–V–N systems

A. Hashimoto, T. Yamaguchi, T. Suzuki, A. Yamamoto

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 218 KB

english, 2005

68

Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

T. Sugaya, T. Yamane, M. Ogura, K. Komori, K. Yonei

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 265 KB

english, 2005

69

Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode

I. Kamiya, Ichiro Tanaka, Y. Tada, M. Azuma, K. Uno, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 234 KB

english, 2005

70

Large InAs/GaAs quantum dots with an optical response in the long-wavelength region

M.J. da Silva, A.A. Quivy, S. Martini, T.E. Lamas, E.C. F. da Silva, J.R. Leite

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 262 KB

english, 2005

71

Nanometer-scale GaAs ring structure grown by droplet epitaxy

T. Mano, N. Koguchi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 274 KB

english, 2005

72

Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures

B.Ya. Meltser, V.A. Solov’ev, O.G. Lyublinskaya, A.A. Toropov, Ya.V. Terent’ev, A.N. Semenov, A.A. Sitnikova, S.V. Ivanov

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 325 KB

english, 2005

73

Formation process of and lattice parameter variation in InAs/GaAs quantum dots dependent on the growth parameters

M.D. Kim, T.W. Kim, Y.D. Woo, S.G. Kim, J.S. Hong

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 439 KB

english, 2005

74

Growth control, structure and ferromagnetic properties of digital Mn/GaAs heterostructures

X.X. Guo, C. Herrmann, X. Kong, D. Kolovos-Vellianitis, L. Däweritz, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 330 KB

english, 2005

75

Infrared light-induced beating of Shubnikov–de Haas oscillations in MBE grown InAs/AlSb quantum wells

Yu.G. Sadofyev, A. Ramamoorthy, J.P. Bird, S.R. Johnson, Y.-H. Zhang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

76

Epitaxial growth of (0 0 1) hybrid structures for spintronic application

J. Herfort, H.-P. Schönherr, A. Kawaharazuka, M. Ramsteiner, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 215 KB

english, 2005

77

Excitonic transitions in (Ga1−xMnx)N thin films with high Curie temperature

Hee Chang Jeon, Ji Ah Lee, Yoon Shon, Seung Joo Lee, Tae Won Kang, Tae Whan Kim, Yung Kee Yeo, Yong Hun Cho, Mun-Deok Kim

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 192 KB

english, 2005

78

Magnetic, optical and transport properties of GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures

M.S. Kim, Y.K. Zhou, S. Kimura, S. Emura, S. Hasegawa, H. Asahi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 316 KB

english, 2005

79

MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics

W.C. Lee, Y.J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S. Maikap, L.S. Lee, W.Y. Hsieh, M.J. Tsai, S.Y. Lin, T. Gustffson, M. Hong, J. Kwo

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 325 KB

english, 2005

80

Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy

T.S. Lay, Y.Y. Liao, W.H. Hung, M. Hong, J. Kwo, J.P. Mannaerts

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 262 KB

english, 2005

81

High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (0 0 1)

X. Wallart, B. Pinsard, F. Mollot

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 243 KB

english, 2005

82

Strain-compensated AlAs/(In,Ga)As heterostructures for short-wavelength intersubband absorption and laser emission

M.P. Semtsiv, M. Ziegler, S. Dressler, W.T. Masselink, N. Georgiev, T. Dekorsy, M. Helm

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 258 KB

english, 2005

83

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

M. Ohta, T. Miyamoto, T. Kageyama, T. Matsuura, Y. Matsui, T. Furuhata, F. Koyama

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 182 KB

english, 2005

84

Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy

S.D. Wu, W.X. Wang, L.W. Guo, Z.H. Li, X.Z. Shang, F. Liu, Q. Huang, J.M. Zhou

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 193 KB

english, 2005

85

Structural studies of strain-symmetrised modulation-doped Si/SiGe structures grown by molecular beam epitaxy

C.V. Falub, M. Meduňa, E. Müller, S. Tsujino, A. Borak, H. Sigg, D. Grützmacher, T. Fromherz, G. Bauer

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 395 KB

english, 2005

86

First-principles study on crystal and electronic structures of stacking-fault tetrahedra in epitaxialized Si films

Ryo Kobayashi, Takashi Nakayama

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 232 KB

english, 2005

87

GSMBE growth and structural characterisation of SiGeC layers for HBT

J. Zhang, J.H. Neave, X.B. Li, P.F. Fewster, H.A.W. El Mubarek, P. Ashburn, I.Z. Mitrovic, O. Buiu, S. Hall

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 287 KB

english, 2005

88

Growth of dilute GaNSb by plasma-assisted MBE

L. Buckle, B.R. Bennett, S. Jollands, T.D. Veal, N.R. Wilson, B.N. Murdin, C.F. McConville, T. Ashley

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 356 KB

english, 2005

89

Room temperature 1.25 μm emission from high indium content InxGa1−xAs/GaAs quantum wells grown by molecular beam epitaxy

Z.C. Niu, H.Q. Ni, X.H. Xu, Y.Q. Xu, Z.H. He, Q. Han, R.H. Wu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 308 KB

english, 2005

90

Very low threshold current density 1.3 μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy

S.M. Wang, Y.Q. Wei, X.D. Wang, Q.X. Zhao, M. Sadeghi, A. Larsson

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 190 KB

english, 2005

91

Lead salt mid-IR photodetectors with narrow linewidth

Martin Arnold, Dmitri Zimin, Karim Alchalabi, Hans Zogg

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

92

Increasing the spectral separation between the emission lines from individual CdSe quantum dots through annealing

T.C.M. Graham, X. Tang, K.A. Prior, B.C. Cavenett, R.J. Warburton

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 198 KB

english, 2005

93

Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications

J.L. Pau, J. Pereiro, C. Rivera, E. Muñoz, E. Calleja

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

94

GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator

F. Lelarge, B. Dagens, C. Cuisin, O. Le Gouezigou, G. Patriarche, W. Van Parys, M. Vanwolleghem, R. Baets, J.L. Gentner

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 298 KB

english, 2005

95

MBE growth of mid-IR type-II interband laser diodes

J. Schmitz, C. Mermelstein, R. Kiefer, M. Walther, J. Wagner

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

96

Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (0 0 1) substrates

V. Poydenot, R. Dujardin, F. Fournel, J.L. Rouvière, A. Barski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 348 KB

english, 2005

97

Photoluminescence properties of Be-doped GaAs/(AlGa)InP heterostructures subjected to annealing processes

V.H. Méndez-García, J.F. García-Motolinía, A.E. Esparza-García, I.C. Hernández

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 331 KB

english, 2005

98

MBE growth of terahertz quantum cascade lasers

H.E. Beere, J.C. Fowler, J. Alton, E.H. Linfield, D.A. Ritchie, R. Köhler, A. Tredicucci, G. Scalari, L. Ajili, J. Faist, S. Barbieri

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 525 KB

english, 2005

99

Growth of AlAsSb/InGaAs MBE-layers for all-optical switches

P. Cristea, Y. Fedoryshyn, H. Jäckel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

100

Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates

M.E. Ikpi, P. Atkinson, S.P. Bremner, D.A. Ritchie

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 418 KB

english, 2005

101

Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

M. Gutiérrez, M. Hopkinson, H.Y. Liu, M. Herrera, D. González, R. García

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 328 KB

english, 2005

102

Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs heterostructures grown on exact GaAs(1 1 1)B substrates

R. Nakane, J. Kondo, M.W. Yuan, S. Sugahara, M. Tanaka

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 364 KB

english, 2005

103

High-temperature (T⩾400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers

Q.K. Yang, Ch. Mann, F. Fuchs, K. Köhler, W. Bronner

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 212 KB

english, 2005

104

Molecular beam epitaxy of vertical-emitting microcavity lasers for the 6–8 micron spectral range operating in continuous-wave mode

T. Schwarzl, M. Böberl, G. Springholz, E. Kaufmann, J. Roither, W. Heiss, J. Fürst, H. Pascher

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 276 KB

english, 2005

105

Growth of BxAl1−xN layers using decaborane on SiC substrates

A. Nakajima, Y. Furukawa, H. Yokoya, H. Yonezu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 473 KB

english, 2005

106

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z.R. Wasilewski, I. Sproule, S. Grzanka, R. Jakieła, J. Borysiuk, G. Kamler, E. Litwin-Staszewska, R. Czernecki, M. Boćkowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 296 KB

english, 2005

107

Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(0 0 1) substrates

C. Renard, X. Marcadet, J. Massies, O. Parillaud

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 246 KB

english, 2005

108

InAs/GaSb type-II superlattices for high performance mid-infrared detectors

H.J. Haugan, G.J. Brown, F. Szmulowicz, L. Grazulis, W.C. Mitchel, S. Elhamri, W.D. Mitchell

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 217 KB

english, 2005

109

Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary

A.N. Semenov, V.A. Solov’ev, B.Ya. Meltser, Ya.V. Terent’ev, L.G. Prokopova, S.V. Ivanov

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 224 KB

english, 2005

110

Low-temperature growth and post-growth annealing of GaAsSb

J. Sigmund, H.L. Hartnagel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 205 KB

english, 2005

111

Band gap widening of MBE grown InN layers by impurity incorporation

Y. Uesaka, A. Yamamoto, A. Hashimoto

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 184 KB

english, 2005

112

Influence of dislocation density on photoluminescence intensity of GaN

J.F. Fälth, M.N. Gurusinghe, X.Y. Liu, T.G. Andersson, I.G. Ivanov, B. Monemar, H.H. Yao, S.C. Wang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 306 KB

english, 2005

113

Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy

M. Cervantes-Contreras, C.A. Quezada-Maya, M. López-López, G. González de la Cruz, M. Tamura, T. Yodo

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 252 KB

english, 2005

114

Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure

Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Bor-Ren Fang, Ruey-Yu Wang

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 224 KB

english, 2005

115

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis, A. Georgakilas

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 287 KB

english, 2005

116

Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(0 0 1) substrates with relatively thin low-temperature GaN buffer layer

Ryuji Katayama, Kentaro Onabe

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 473 KB

english, 2005

117

Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy

E. Roventa, G. Alexe, R. Kröger, D. Hommel, A. Rosenauer

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 252 KB

english, 2005

118

Excitation intensity dependence of up-converted emission in ZnSe–ZnTe superlattice grown by MBE

M. Ohashi, Y. Ichinohe, G. Shigaura, Y. Sasaki, Y. Chikarayumi, Na. Kimura, No. Kimura, T. Sawada, K. Suzuki, K. Imai, H. Saito, P.A. Trubenko, Yu.V. Korostelin

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 224 KB

english, 2005

119

Epitaxial lift-off of MBE grown II–VI heterostructures using a novel MgS release layer

C. Bradford, A. Currran, A. Balocchi, B.C. Cavenett, K.A. Prior, R.J. Warburton

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

120

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 282 KB

english, 2005

121

Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications

Kazuto Koike, Kenji Hama, Ippei Nakashima, Gen-you Takada, Ken-ichi Ogata, Shigehiko Sasa, Masataka Inoue, Mitsuaki Yano

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 240 KB

english, 2005

122

Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer

Miki Fujita, Masanori Sasajima, Yuparwadee Deesirapipat, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 867 KB

english, 2005

123

Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy

Y.M. Lu, C.X. Wu, Z.P. Wei, Z.Z. Zhang, D.X. Zhao, J.Y. Zhang, Y.C. Liu, D.Z. Shen, X.W. Fan

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

124

Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy

H.W. Liang, Y.M. Lu, D.Z. Shen, J.F. Yan, B.H. Li, J.Y. Zhang, Y.C. Liu, X.W. Fan

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

125

High responsivity quantum-dot infrared photodetector with blocking layers at both sides of the structure

Shih-Yen Lin, Jim-Yong Chi, Si-Chen Lee

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 213 KB

english, 2005

126

Interface disorder of Zn1−xCdxTe/ZnTe multiple quantum wells grown by MBE using RHEED intensity oscillations

S.H. Park, J.H. Chang, M.N. Jung, Y.K. Park, K. Goto, T. Yao

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 372 KB

english, 2005

127

A comparison between GaAs and AlAs deposition on patterned substrates

R.S. Williams, M.J. Ashwin, T.S. Jones, J.H. Neave

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 295 KB

english, 2005

128

Phosphorous-beam free InP substrate cleaning for MBE

H. Bando, H. Yoshino, H. Okamoto, K. Iizuka

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 198 KB

english, 2005

129

The effects of thermal treatments on the electrical properties of phosphorus doped ZnO layers grown by MBE

H. Tampo, H. Shibata, P. Fons, A. Yamada, K. Matsubara, K. Iwata, K. Tamura, H. Takasu, S. Niki

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 282 KB

english, 2005

130

Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices

M. Kobayashi, J. Ueno, M. Enami, S. Katsuta, A. Ichiba, K. Ogura, K. Onomitsu, Y. Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 249 KB

english, 2005

131

N-type doping of zinc selenide using a silver iodide thermal effusion source

J.K. Morrod, T.C.M. Graham, K.A. Prior, B.C. Cavenett

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

132

Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0 0 0 1)

E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias, A. Delimitis, A. Georgakilas

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 330 KB

english, 2005

133

InN layers grown on silicon substrates: effect of substrate temperature and buffer layers

J. Grandal, M.A. Sánchez-García

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 271 KB

english, 2005

134

Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0 0 0 1) substrates by RF-MBE

X.Q. Shen, M. Shimizu, T. Yamamoto, Y. Honda, H. Okumura

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 287 KB

english, 2005

135

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 178 KB

english, 2005

136

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennegues, J. Massies

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

137

Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 μm on InP(3 1 1)B substrates

P. Caroff, C. Platz, O. Dehaese, C. Paranthoën, N. Bertru, A. Le Corre, S. Loualiche

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 218 KB

english, 2005

138

High-power InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

A. Wilk, A.R. Kovsh, S.S. Mikhrin, C. Chaix, I.I. Novikov, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, N.N. Ledentsov

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 370 KB

english, 2005

139

InP-based quantum dash lasers for wide gain bandwidth applications

S. Deubert, A. Somers, W. Kaiser, R. Schwertberger, J.P. Reithmaier, A. Forchel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 236 KB

english, 2005

140

Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

I. Friel, K. Driscoll, E. Kulenica, M. Dutta, R. Paiella, T.D. Moustakas

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 257 KB

english, 2005

141

Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE

Ryuhei Kimura, Takeaki Suzuki, Masamichi Ouchi, Kouichi Ishida, Kiyoshi Takahashi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

142

Regrowth dynamics of InAs quantum dots on the GaAs circular mesa

Zhigang Xie, Fang Wei, Hui Cao, Glenn S. Solomon

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 508 KB

english, 2005

143

Growth and characterization of InAsN alloy films and quantum wells

M. Kuroda, A. Nishikawa, R. Katayama, K. Onabe

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 442 KB

english, 2005

144

Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots

H.J. Parry, M.J. Ashwin, J.H. Neave, T.S. Jones

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 413 KB

english, 2005

145

Preface

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 129 KB

english, 2005

146

Author Index

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

147

Subject Index

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 251 KB

english, 2005

148

Contents MBE XIII

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 221 KB

english, 2005

149

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 74 KB

english, 2005

150

Instructions to Authors

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 202 KB

english, 2005

151

Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction

Wolfgang Braun, Vladimir M. Kaganer, Bernd Jenichen, Dillip K. Satapathy, Xiangxin Guo, Brad P. Tinkham, Klaus H. Ploog

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 408 KB

english, 2005

152

Triggered luminescence in a strained Si1−xGex/Si single quantum well with surface as an electron reservoir

N. Yasuhara, S. Fukatsu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 242 KB

english, 2005

153

MBE growth of wide band gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions

Shizuo Fujita, Hiroshi Tanaka, Shigeo Fujita

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 196 KB

english, 2005

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