GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for...

Journal of Crystal Growth 2005 Vol. 278; Iss. 1-4

GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator

F. Lelarge, B. Dagens, C. Cuisin, O. Le Gouezigou, G. Patriarche, W. Van Parys, M. Vanwolleghem, R. Baets, J.L. Gentner
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Volume:
278
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2004.12.154
File:
PDF, 298 KB
english, 2005
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