Structural and electrical properties of AlGaN/GaN HEMTs...

Journal of Crystal Growth 2005 Vol. 278; Iss. 1-4

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie
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Volume:
278
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2005.01.037
File:
PDF, 178 KB
english, 2005
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