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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications
D.F. Storm, D.S. Katzer, J.A. Mittereder, S.C. Binari, B.V. Shanabrook, X. Xu, D.S. McVey, R.P. Vaudo, G.R. BrandesVolume:
281
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2005.03.009
File:
PDF, 268 KB
english, 2005