Volume 281; Issue 1

Main
Journal of Crystal Growth
Volume 281; Issue 1

Journal of Crystal Growth

Volume 281; Issue 1

1

Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

M. Boćkowski, I. Grzegory, J. Borysiuk, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 338 KB

english, 2005

2

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

D.F. Storm, D.S. Katzer, J.A. Mittereder, S.C. Binari, B.V. Shanabrook, X. Xu, D.S. McVey, R.P. Vaudo, G.R. Brandes

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 268 KB

english, 2005

3

Thermodynamic analysis of AlGaN HVPE growth

Akinori Koukitu, Jun Kikuchi, Yoshihiro Kangawa, Yoshinao Kumagai

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005

4

Growth of thick AlN layers by hydride vapor-phase epitaxy

Yoshinao Kumagai, Takayoshi Yamane, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 349 KB

english, 2005

5

AlN bulk crystals grown on SiC seeds

R. Dalmau, R. Schlesser, B.J. Rodriguez, R.J. Nemanich, Z. Sitar

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 392 KB

english, 2005

6

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 454 KB

english, 2005

7

Crucible materials for growth of aluminum nitride crystals

R. Schlesser, R. Dalmau, D. Zhuang, R. Collazo, Z. Sitar

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 297 KB

english, 2005

8

Sublimation growth of AlN crystals: Growth mode and structure evolution

R. Yakimova, A. Kakanakova-Georgieva, G.R. Yazdi, G.K. Gueorguiev, M. Syväjärvi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 319 KB

english, 2005

9

Sublimation growth of AlN bulk crystals in Ta crucibles

E.N. Mokhov, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, A.D. Roenkov, A.S. Segal, A.A. Wolfson, Yu.N. Makarov, M.G. Ramm, H. Helava

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 443 KB

english, 2005

10

Optoelectronic devices on bulk GaN

S. Figge, T. Böttcher, J. Dennemarck, R. Kröger, T. Paskova, B. Monemar, D. Hommel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 271 KB

english, 2005

11

Properties of InGaN blue laser diodes grown on bulk GaN substrates

P. Perlin, T. Suski, M. Leszczyński, P. Prystawko, T. Świetlik, Ł. Marona, P. Wiśniewski, R. Czernecki, G. Nowak, J.L. Weyher, G. Kamler, J. Borysiuk, E. Litwin-Staszewska, L. Dmowski, R. Piotrzkowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 290 KB

english, 2005

12

Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight

V.F. Mymrin, K.A. Bulashevich, N.I. Podolskaya, S.Yu. Karpov

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 860 KB

english, 2005

13

Defects in GaN single crystals and homoepitaxial structures

J.L. Weyher, G. Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 645 KB

english, 2005

14

Electronic and optical properties of wurtzite and zinc-blende TlN and AlN

A. Ferreira da Silva, N. Souza Dantas, J.S. de Almeida, R. Ahuja, C. Persson

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 412 KB

english, 2005

15

Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques

S. Juršėnas, S. Miasojedovas, A. Z˘ukauskas

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 301 KB

english, 2005

16

Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire

S. Miasojedovas, S. Juršėnas, A. Žukauskas, V.Yu. Ivanov, M. Godlewski, M. Leszczyński, P. Perlin, T. Suski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

17

Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film

E. Silveira, J.A. Freitas, G.A. Slack, L.J. Schowalter, M. Kneissl, D.W. Treat, N.M. Johnson

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

18

Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures

W. Knap, C. Skierbiszewski, K. Dybko, J. Łusakowski, M. Siekacz, I. Grzegory, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 302 KB

english, 2005

19

Identification of donors, acceptors, and traps in bulk-like HVPE GaN

D.C. Look, Z.-Q. Fang, B. Claflin

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 291 KB

english, 2005

20

Growth of thick GaN layers with hydride vapour phase epitaxy

B. Monemar, H. Larsson, C. Hemmingsson, I.G. Ivanov, D. Gogova

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 771 KB

english, 2005

21

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

B. Łucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, G. Kamler, E. Litwin-Staszewska, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 536 KB

english, 2005

22

Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors

Jaime A. Freitas Jr

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 801 KB

english, 2005

23

Defects in p-doped bulk GaN crystals grown with Ga polarity

Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, M.A. O’Keefe

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 596 KB

english, 2005

24

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient

B.N. Feigelson, R.L. Henry

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 447 KB

english, 2005

25

Thick AlN layers grown by HVPE

O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov, V. Dmitriev

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 391 KB

english, 2005

26

Bulk Nitride Workshop

Jaime A. Freitas, Zlatko Sitar

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 123 KB

english, 2005

27

José Roberto Leite (1942–2004)

Jaime A. Freitas Jr.

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 147 KB

english, 2005

28

Contents Bulk Nitride Workshop

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 132 KB

english, 2005

29

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 73 KB

english, 2005

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