![](/img/cover-not-exists.png)
Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures
W. Knap, C. Skierbiszewski, K. Dybko, J. Łusakowski, M. Siekacz, I. Grzegory, S. PorowskiVolume:
281
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.jcrysgro.2005.03.025
File:
PDF, 302 KB
english, 2005