![](/img/cover-not-exists.png)
High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication
Donghun Choi, James S. Harris, Eunji Kim, Paul C. McIntyre, Joel Cagnon, Susanne StemmerVolume:
311
Year:
2009
Language:
english
Pages:
10
DOI:
10.1016/j.jcrysgro.2008.09.138
File:
PDF, 2.01 MB
english, 2009