High-quality III–V semiconductor MBE growth on Ge/Si...

High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

Donghun Choi, James S. Harris, Eunji Kim, Paul C. McIntyre, Joel Cagnon, Susanne Stemmer
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
311
Year:
2009
Language:
english
Pages:
10
DOI:
10.1016/j.jcrysgro.2008.09.138
File:
PDF, 2.01 MB
english, 2009
Conversion to is in progress
Conversion to is failed