Volume 311; Issue 7

Main
Journal of Crystal Growth
Volume 311; Issue 7

Journal of Crystal Growth

Volume 311; Issue 7

1

Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy

N. Sritirawisarn, F.W.M. van Otten, T.J. Eijkemans, R. Nötzel

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 686 KB

english, 2009

2

Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots

P. Atkinson, O.G. Schmidt

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 491 KB

english, 2009

3

Free carrier induced substrate heating of the epitaxially grown GaMnAs

V. Novák, K. Olejník, M. Cukr

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 247 KB

english, 2009

4

Quantum dot lasers: From promise to high-performance devices

P. Bhattacharya, Z. Mi, J. Yang, D. Basu, D. Saha

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.02 MB

english, 2009

5

Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy

K. Ohtani, M. Belmoubarik, H. Ohno

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 467 KB

english, 2009

6

High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

Donghun Choi, James S. Harris, Eunji Kim, Paul C. McIntyre, Joel Cagnon, Susanne Stemmer

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 2.01 MB

english, 2009

7

Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

H.J. Haugan, S. Elhamri, B. Ullrich, F. Szmulowicz, G.J. Brown, W.C. Mitchel

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 482 KB

english, 2009

8

MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106 cm2/V s

V. Umansky, M. Heiblum, Y. Levinson, J. Smet, J. Nübler, M. Dolev

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 491 KB

english, 2009

9

Improved performance of GaInNAs solar cells grown by molecular-beam epitaxy using increased growth rate instead of surfactants

A.J. Ptak, R. France, C.-S. Jiang, M.J. Romero

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 471 KB

english, 2009

10

MBE growth and patterned backgating of electron–hole bilayer structures

I. Farrer, A.F. Croxall, K. Das Gupta, C.A. Nicoll, H.E. Beere, M. Thangaraj, J. Waldie, D.A. Ritchie, M. Pepper

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 505 KB

english, 2009

11

MBE growth of II–VI materials on GaSb substrates for photovoltaic applications

S. Wang, D. Ding, X. Liu, X.-B. Zhang, D.J. Smith, J.K. Furdyna, Y.-H. Zhang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 534 KB

english, 2009

12

Strained quantum wells in scrolled structures studied by μ-photoluminescence

R. Hey, M. Ramsteiner, P.V. Santos, K.-J. Friedland

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 426 KB

english, 2009

13

Surface compositional mapping of self-assembled InAs/GaAs quantum rings

G. Biasiol, R. Magri, S. Heun, A. Locatelli, T.O. Mentes, L. Sorba

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 479 KB

english, 2009

14

InGaAs quantum wires grown on (1 0 0)InP substrates

T.E. Tzeng, C.Y. Chen, David J. Feng, T.S. Lay

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 860 KB

english, 2009

15

In situ X-ray diffraction during stacking of InAs/GaAs(0 0 1) quantum dot layers and photoluminescence spectroscopy

M. Takahasi, T. Kaizu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 350 KB

english, 2009

16

Design elements affecting wafer temperature uniformity in multi-wafer production MBE systems

T.J. Rogers, W.A. Shelton, C. Conroy

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 410 KB

english, 2009

17

Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 μm

Dirk Bisping, Damian Pucicki, Marc Fischer, Sven Höfling, Alfred Forchel

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 226 KB

english, 2009

18

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Tien Khee Ng, Soon Fatt Yoon, Kian Hua Tan, Kah Pin Chen, Hendrix Tanoto, Kim Luong Lew, Satrio Wicaksono, Wan Khai Loke, Carl Dohrman, Eugene A. Fitzgerald

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 723 KB

english, 2009

19

MBE growth of active regions for electrically pumped, cw-operating GaSb-based VCSELs

K. Kashani-Shirazi, A. Bachmann, G. Boehm, S. Ziegler, M.-C. Amann

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 390 KB

english, 2009

20

Coexistence of ferromagnetism and quantum Hall effect in Mn modulation-doped two-dimensional hole systems

U. Wurstbauer, M. Soda, R. Jakiela, D. Schuh, D. Weiss, J. Zweck, W. Wegscheider

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 736 KB

english, 2009

21

MBE growth of In(Ga)As quantum dots for entangled light emission

C.A. Nicoll, C.L. Salter, R.M. Stevenson, A.J. Hudson, P. Atkinson, K. Cooper, A.J. Shields, D.A. Ritchie

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 463 KB

english, 2009

22

Fe-layer-induced aligned 1D nanostructure on ZnSe surface

G. Wang, S.K. Lok, S.K. Chan, C. Wang, G.K.L. Wong, I.K. Sou

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 441 KB

english, 2009

23

Structure analysis of epitaxial Gd2O3/Si(0 0 1) for high-k gate dielectric applications

Tatsuro Watahiki, Bernd Jenichen, Roman Shayduk, Brad P. Tinkham, Wolfgang Braun, Henning Riechert

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 881 KB

english, 2009

24

Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

C.A. Lin, T.D. Lin, T.H. Chiang, H.C. Chiu, P. Chang, M. Hong, J. Kwo

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 280 KB

english, 2009

25

Gallium beam analysis and implications for the growth of ultra-high-mobility GaAs/AlGaAs heterostructures

Stefan Schmult, Samuel Taylor, Werner Dietsche

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 601 KB

english, 2009

26

Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

S.K. Lok, B.K. Li, J.N. Wang, G.K.L. Wong, I.K. Sou

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 615 KB

english, 2009

27

Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier

Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 360 KB

english, 2009

28

Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4 μm range

Y. Gu, Y.G. Zhang, K. Wang, A.Z. Li, Y.Y. Li

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 438 KB

english, 2009

29

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

E. Luna, F. Ishikawa, B. Satpati, J.B. Rodriguez, E. Tournié, A. Trampert

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 756 KB

english, 2009

30

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

R.T. Moug, C. Bradford, F. Izdebski, I. Davidson, A. Curran, R.J. Warburton, K.A. Prior, A. Aouni, F.M. Morales, S.I. Molina

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 536 KB

english, 2009

31

Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxy

M. Zhang, J. Moore, Z. Mi, P. Bhattacharya

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 656 KB

english, 2009

32

High-temperature growth of heteroepitaxial InSb films on Si(1 1 1) substrate via the InSb bi-layer

M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, K. Maezawa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

33

Research advances on III–V MOSFET electronics beyond Si CMOS

J. Kwo, M. Hong

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 914 KB

english, 2009

34

Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical switching applications

Takahiro Kitada, Takuya Mukai, Tomoya Takahashi, Ken Morita, Toshiro Isu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

35

Etching enhanced annealing of GaMnAs layers

K. Olejni´k, V. Novák, M. Cukr, J. Mašek, T. Jungwirth

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 321 KB

english, 2009

36

Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 517 KB

english, 2009

37

Droplet epitaxy of GaAs quantum dots on (0 0 1), vicinal (0 0 1), (1 1 0), and (3 1 1)A GaAs

Ch. Heyn, A. Stemmann, A. Schramm, W. Hansen

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 491 KB

english, 2009

38

Quantum transport and spin–orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

N. Nishizako, T. Manago, S. Ishida, H. Geka, I. Shibasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 536 KB

english, 2009

39

Transport properties of InSb and InAs0.1Sb0.9 thin films sandwiched between Al0.1In0.9Sb layers grown by molecular beam epitaxy

Ichiro Shibasaki, Hirotaka Geka, Atsushi Okamoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 273 KB

english, 2009

40

Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell

C. Soubervielle-Montalvo, V. Mishournyi, F. de Anda, A. Gorbatchev, I.C. Hernández, S. Gallardo, Y. Kudriatsev, M. López-López, V.H. Méndez-García

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 329 KB

english, 2009

41

Monolithic integration of InP-based transistors on Si substrates using MBE

W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara, E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, B. Brar, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompso

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 863 KB

english, 2009

42

Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy

P. Boonpeng, S. Panyakeow, S. Ratanathammaphan

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 496 KB

english, 2009

43

Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions

A. Gushterov, L. Lingys, J.P. Reithmaier

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 816 KB

english, 2009

44

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

L.K. Chu, W.C. Lee, M.L. Huang, Y.H. Chang, L.T. Tung, C.C. Chang, Y.J. Lee, J. Kwo, M. Hong

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 332 KB

english, 2009

45

High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2 μm

Jonna Paajaste, Soile Suomalainen, Riku Koskinen, Antti Härkönen, Mircea Guina, Markus Pessa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 214 KB

english, 2009

46

MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

A. Gassenq, L. Cerutti, A.N. Baranov, E. Tournié

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

47

MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates

K. Umeno, Y. Furukawa, A. Wakahara, R. Noma, H. Okada, H. Yonezu, Y. Takagi, H. Kan

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 489 KB

english, 2009

48

Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures

C.Y. Ngo, S.F. Yoon, W.K. Loke, T.K. Ng, S.J. Chua

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 543 KB

english, 2009

49

Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires

I.C. Robin, P. Marotel, A.H. El-Shaer, V. Petukhov, A. Bakin, A. Waag, M. Lafossas, J. Garcia, M. Rosina, A. Ribeaud, S. Brochen, P. Ferret, G. Feuillet

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 471 KB

english, 2009

50

High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

W.H. Chang, C.H. Lee, P. Chang, Y.C. Chang, Y.J. Lee, J. Kwo, C.C. Tsai, J.M. Hong, C.-H. Hsu, M. Hong

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 853 KB

english, 2009

51

Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices

Takao Oshita, Keita Takahashi, Kazuo Tsutsui

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 438 KB

english, 2009

52

GaInAsN growth studies for InP-based long-wavelength laser applications (TUA3-3)

Tobias Gründl, Gerhard Böhm, Ralf Meyer, Markus-Christian Amann

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 680 KB

english, 2009

53

Al(In)As–(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers

Gerhard Boehm, Simeon Katz, Ralf Meyer, Markus-Christian Amann

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 317 KB

english, 2009

54

MBE grown GaInNAs-based multi-Watt disk lasers

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, M. Pessa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 709 KB

english, 2009

55

Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE

A. Adikimenakis, S.-L. Sahonta, G.P. Dimitrakopulos, J. Domagala, Th. Kehagias, Ph. Komninou, E. Iliopoulos, A. Georgakilas

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.24 MB

english, 2009

56

Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures

Y.G. Zhang, Y. Gu, Z.B. Tian, K. Wang, A.Z. Li, X.R. Zhu, Y.L. Zheng

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 244 KB

english, 2009

57

Gallium adlayer adsorption and desorption studies with real-time analysis by spectroscopic ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBE

P. Misra, C. Boney, D. Starikov, A. Bensaoula

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 910 KB

english, 2009

58

Terahertz quantum cascade lasers based on

M. Fischer, G. Scalari, Ch. Walther, J. Faist

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

59

Growth of GaInNAs and 1.3 μm edge emitting lasers by molecular beam epitaxy

S.M. Wang, G. Adolfsson, H. Zhao, Y.Q. Wei, J. Gustavsson, Q.X. Zhao, M. Sadeghi, A. Larsson

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 732 KB

english, 2009

60

GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

W.C. Lee, Y.J. Lee, J. Kwo, C.H. Hsu, C.H. Lee, S.Y. Wu, H.M. Ng, M. Hong

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 543 KB

english, 2009

61

The Kondo effect observed up to TK∼80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

K. Shibata, K. Hirakawa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 588 KB

english, 2009

62

Growth of high-quality ZnO films on Al2O3 (0 0 0 1) by plasma-assisted molecular beam epitaxy

J.S. Park, S.K. Hong, I.H. Im, J.S. Ha, H.J. Lee, S.H. Park, J.H. Chang, M.W. Cho, T. Yao

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 472 KB

english, 2009

63

Growth of free-standing GaN layer on Si(1 1 1) substrate

Tsung Hsi Yang, Jui Tai Ku, Jet-Rung Chang, Shih-Guo Shen, Yi-Cheng Chen, Yuen Yee Wong, Wu Ching Chou, Chien-Ying Chen, Chun-Yen Chang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 756 KB

english, 2009

64

Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy

J. Li, Q. Gong, S.G. Li, A.Z. Li, C. Lin

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 415 KB

english, 2009

65

High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

T. Mozume, S. Gozu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 564 KB

english, 2009

66

Wide band gap II–VI selenides for short wavelength intersubband devices

A. Shen, W.O. Charles, B.S. Li, K.J. Franz, C. Gmachl, Q. Zhang, M.C. Tamargo

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 734 KB

english, 2009

67

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

Thomas Aichele, Adrien Tribu, Gregory Sallen, Juanita Bocquel, Edith Bellet-Amalric, Catherine Bougerol, Jean-Philippe Poizat, Kuntheak Kheng, Régis André, Serge Tatarenko, Henri Mariette

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 676 KB

english, 2009

68

Control of thick single crystal erbium oxide growth on (1 1 1) silicon

R.S. Smith, R.H. Sewell, A. Clark, P. Atanackovic

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 690 KB

english, 2009

69

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 437 KB

english, 2009

70

Development of uncooled miniaturized InSb photovoltaic infrared sensors for temperature measurements

N. Kuze, T. Morishita, E.G. Camargo, K. Ueno, A. Yokoyama, M. Sato, H. Endo, Y. Yanagita, S. Tokuo, H. Goto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 365 KB

english, 2009

71

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

S. Haffouz, S. Raymond, Z.G. Lu, P.J. Barrios, D. Roy-Guay, X. Wu, J.R. Liu, D. Poitras, Z.R. Wasilewski

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 381 KB

english, 2009

72

Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (3 1 1)B by molecular beam epitaxy

Ryuji Oshima, Yasushi Shoji, Ayami Takata, Yoshitaka Okada

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.11 MB

english, 2009

73

Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers—A challenge for MBE growth

Christian Manz, Quankui Yang, Marcel Rattunde, Nicola Schulz, Benno Rösener, Lutz Kirste, Joachim Wagner, Klaus Köhler

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 352 KB

english, 2009

74

Photoluminescence properties of Pb1−xSnxTe/CdTe quantum wells grown on (1 0 0)-oriented GaAs substrates by molecular beam epitaxy

Kazuto Koike, Takanori Hotei, Ryou Kawaguchi, Mitsuaki Yano

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 737 KB

english, 2009

75

Optical characterization of InGaAsN layers grown on InP substrates

M. Yoshikawa, K. Miura, Y. Iguchi, Y. Kawamura

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 389 KB

english, 2009

76

Nanohole formation on AlGaAs surfaces by local droplet etching with gallium

Ch. Heyn, A. Stemmann, W. Hansen

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 511 KB

english, 2009

77

Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxy

N. Pankaow, S. Panyakeow, S. Ratanathammaphan

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 757 KB

english, 2009

78

Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE

Y. Gu, H. Li, A.Z. Li, Y.Y. Li, L. Wei, Y.G. Zhang, K. Wang, Y.L. Zheng

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 320 KB

english, 2009

79

Optical studies on InAs/InGaAs/GaNAs strain-compensated quantum dots grown on GaAs (0 0 1) by molecular beam epitaxy

Ayami Takata, Ryuji Oshima, Yasushi Shoji, Yoshitaka Okada

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 715 KB

english, 2009

80

Nitridation of (1 1 1)Al substrates for GaN growth by molecular beam epitaxy

Masashi Sawadaishi, Satoshi Taguchi, Kouki Sasaya, Tohru Honda

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

81

Structural properties of AlCrN, GaCrN and InCrN

S. Kimura, S. Emura, K. Tokuda, Y.K. Zhou, S. Hasegawa, H. Asahi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 228 KB

english, 2009

82

Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments

R. Contreras-Guerrero, A. Guillen-Cervantes, Z. Rivera-Alvarez, A. Pulzara-Mora, S. Gallardo-Hernandez, Y. Kudriatsev, V.M. Sanchez-Resendiz, J.S. Rojas-Ramirez, E. Cruz-Hernandez, V.H. Méndez-García,

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 668 KB

english, 2009

83

GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth

Y.H. Chang, H.C. Chiu, W.H. Chang, J. Kwo, C.C. Tsai, J.M. Hong, M. Hong

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 282 KB

english, 2009

84

Height-selective etching for regrowth of self-aligned contacts using MBE

G.J. Burek, M.A. Wistey, U. Singisetti, A. Nelson, B.J. Thibeault, S.R. Bank, M.J.W. Rodwell, A.C. Gossard

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 561 KB

english, 2009

85

Carbon doping of non-polar cubic GaN by CBr4

D.J. As, E. Tschumak, H. Pöttgen, O. Kasdorf, J.W. Gerlach, H. Karl, K. Lischka

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 302 KB

english, 2009

86

Group-IV-diluted magnetic semiconductor FexSi1−x thin films grown by molecular beam epitaxy

W.F. Su, L. Gong, J.L. Wang, S. Chen, Y.L. Fan, Z.M. Jiang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 385 KB

english, 2009

87

Investigation on the ZnO:N films grown on (0 0 0 1) and (0 0 0 1¯) ZnO templates by plasma-assisted molecular beam epitaxy

S.H. Park, J.H. Chang, T. Minegishi, J.S. Park, I.H. Im, M. Ito, T. Taishi, S.K. Hong, D.C. Oh, M.W. Cho, T. Yao

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 240 KB

english, 2009

88

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

I. Tångring, Y.X. Song, Z.H. Lai, S.M. Wang, M. Sadeghi, A. Larsson

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 725 KB

english, 2009

89

Growth and properties of wide bandgap MgSe/ZnxCd1−xSe multiple quantum wells for intersubband devices operating at short wavelengths

B.S. Li, A. Shen, W.O. Charles, Q. Zhang, M.C. Tamargo

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 572 KB

english, 2009

90

Growth of one-dimensional III–V structures on Si nanowires and pre-treated planar Si surfaces

H. Detz, P. Klang, A.M. Andrews, A. Lugstein, M. Steinmair, Y.J. Hyun, E. Bertagnolli, W. Schrenk, G. Strasser

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 651 KB

english, 2009

91

Site-controlled InAs quantum dot formation grown on the templates fabricated by the Nano-Jet Probe method

S. Ohkouchi, N. Ozaki, Y. Sugimoto, H. Ishikawa, K. Asakawa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 343 KB

english, 2009

92

MBE-grown Fe nanowires on a ZnS(1 0 0) surface

S.K. Lok, S.K. Chan, G.K.L. Wong, I.K. Sou

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 707 KB

english, 2009

93

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

L. Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, A. Garnache, E. Tournié, F. Genty

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 656 KB

english, 2009

94

Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

A. Khoshakhlagh, E. Plis, S. Myers, Y.D. Sharma, L.R. Dawson, S. Krishna

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 328 KB

english, 2009

95

Epitaxial films for Ge–Sb–Te phase change memory

R. Shayduk, W. Braun

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 965 KB

english, 2009

96

Compact green laser converter with injection pumping, based on MBE grown II–VI nanostructures

S.V. Ivanov, E.V. Lutsenko, S.V. Sorokin, I.V. Sedova, S.V. Gronin, A.G. Voinilovich, N.P. Tarasuk, G.P. Yablonskii, P.S. Kop’ev

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 384 KB

english, 2009

97

Optical properties of ZnSe on GaN (0 0 0 1) grown by MBE

Y. Ichinohe, K. Kyoh, K. Honma, T. Sawada, K. Suzuki, No. Kimura, Na. Kimura, K. Imai

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 360 KB

english, 2009

98

Real time extraction of quantum dot size from RHEED intensity profiles

C. Rajapaksha, A. Freundlich

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

99

Improving size distribution of InAs quantum dots for intersubband devices

Aaron Maxwell Andrews, Pavel Klang, Remigiusz Krzyzanowski, Matthias Schramböck, Hermann Detz, Werner Schrenk, Gottfried Strasser

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 309 KB

english, 2009

100

RHEED intensity oscillation of C60 layer epitaxial growth

Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 419 KB

english, 2009

101

Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

S. Oktyabrsky, V. Tokranov, S. Koveshnikov, M. Yakimov, R. Kambhampati, H. Bakhru, R. Moore, W. Tsai

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 787 KB

english, 2009

102

Mn deposition on GaAs(0 0 1)-c(4×4)α reconstructed surfaces: A scanning-tunneling-microscopy study

Daisuke Komamiya, Jun Okabayashi, Junji Yoshino

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 762 KB

english, 2009

103

Unintentional aluminum incorporation related to the introduction of nitrogen gas during the plasma-assisted molecular beam epitaxy

F. Ishikawa, S.D. Wu, M. Kato, M. Uchiyama, K. Higashi, M. Kondow

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 308 KB

english, 2009

104

High-density GaAs/AlGaAs quantum dots formed on GaAs (3 1 1)A substrates by droplet epitaxy

T. Mano, T. Kuroda, K. Mitsuishi, T. Noda, K. Sakoda

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 612 KB

english, 2009

105

Molecular beam epitaxy growth of neodymium-doped yttrium aluminum perovskite

R. Kumaran, S.E. Webster, S. Penson, Wei Li, T. Tiedje

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 520 KB

english, 2009

106

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

W.C. Lee, B.H. Chin, L.K. Chu, T.D. Lin, Y.J. Lee, L.T. Tung, C.H. Lee, M. Hong, J. Kwo

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 249 KB

english, 2009

107

The reproducibility and transferability of a THz quantum cascade laser design between two MBE growth manufacturers’ platforms

H.E. Beere, J.R. Freeman, O.P. Marshall, C.H. Worrall, D.A Ritchie

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 920 KB

english, 2009

108

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Katsumi Kishino, Hiroto Sekiguchi, Akihiko Kikuchi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1014 KB

english, 2009

109

Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts

Chichih Liao, Donald Cheng, Chienchia Cheng, K.Y. Cheng, Milton Feng, T.H. Chiang, J. Kwo, M. Hong

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 473 KB

english, 2009

110

The growth of high electron mobility InAsSb for application to high electron-mobility transistors

Chichih Liao, K.Y. Cheng

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 143 KB

english, 2009

111

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

112

Crystalline and electrical characteristics of C60-doped GaAs films

Jiro Nishinaga, Tomonori Takada, Takashi Hayashi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 350 KB

english, 2009

113

Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy

M. Beaudoin, I.C.W. Chan, D. Beaton, M. Elouneg-Jamroz, T. Tiedje, M. Whitwick, E.C. Young, J.F. Young, N. Zangenberg

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 386 KB

english, 2009

114

Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (1 0 0) by droplet epitaxy

T. Noda, T. Mano, T. Kuroda, K. Sakoda, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 331 KB

english, 2009

115

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

H. Zhao, S.M. Wang, Q.X. Zhao, M. Sadeghi, A. Larsson

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 257 KB

english, 2009

116

The de-oxidation of a ZnTe surface by hydrogen treatment

K. Kyoh, Y. Ichinohe, K. Honma, Na. Kimura, No. Kimura, T. Sawada, K. Suzuki, K. Imai, H. Saito, Yu. V. Korostelin

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 377 KB

english, 2009

117

Differential absorption spectroscopy on coupled InGaAs quantum dots

K.Y. Chuang, C.Y. Chen, T.E. Tzeng, David J.Y. Feng, T.S. Lay

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 468 KB

english, 2009

118

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V.N. Jmerik, T.V. Shubina, A.M. Mizerov, K.G. Belyaev, A.V. Sakharov, M.V. Zamoryanskaya, A.A. Sitnikova, V.Yu. Davydov, P.S. Kop’ev, E.V. Lutsenko, N.V. Rzheutskii, A.V. Danilchik, G.P. Yablonskii, S

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 323 KB

english, 2009

119

InSb quantum-well structures for electronic device applications

M. Edirisooriya, T.D. Mishima, C.K. Gaspe, K. Bottoms, R.J. Hauenstein, M.B. Santos

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 259 KB

english, 2009

120

Hall effect and magnetoresistance analysis by electron–hole coexisting model in AlInSb/InAsSb quantum wells

T. Manago, N. Nisizako, S. Ishida, H. Geka, I. Shibasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 496 KB

english, 2009

121

Critical thickness of MBE-grown Ga1−xInxSb (x

T.A. Nilsen, M. Breivik, E. Selvig, B.O. Fimland

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 369 KB

english, 2009

122

Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

J.L. Hall, M.A. Moram, A. Sanchez, S.V. Novikov, A.J. Kent, C.T. Foxon, C.J. Humphreys, R.P. Campion

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 468 KB

english, 2009

123

Molecular beam epitaxy in a high-volume GaAs fab

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 138 KB

english, 2009

124

Theoretical and experimental molecular beam angular distribution studies for gas injection in ultra-high vacuum

L. Isnard, R. Arès

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 322 KB

english, 2009

125

Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source

F. Natali, Y. Cordier, C. Chaix, P. Bouchaib

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

126

Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

D.L. Dheeraj, G. Patriarche, H. Zhou, J.C. Harmand, H. Weman, B.O. Fimland

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 335 KB

english, 2009

127

Blue-shift emission in InP-based quantum dots by SiO2 sputtering and rapid thermal annealing

T.C. Hsu, T.E. Tzeng, E.Y. Lin, K.Y. Chuang, C.L. Chiu, T.S. Lay

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 745 KB

english, 2009

128

light emitting diodes

R.B. Lewis, D.A. Beaton, Xianfeng. Lu, T. Tiedje

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 288 KB

english, 2009

129

MBE growth and characterization of TlInGaAsN double quantum well structures

D. Krishnamurthy, S. Shanthi, K.M. Kim, Y. Sakai, M. Ishimaru, S. Hasegawa, H. Asahi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 2.13 MB

english, 2009

130

The growth and characterization of an InN layer on AlN/Si (1 1 1)

M.D. Kim, S.R. Park, J.E. Oh, S.G. Kim, W.C. Yang, Bun-Hei Koo

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 784 KB

english, 2009

131

Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (0 0 1) substrates with different stripe orientations

D. Matei, B. Sanduijav, G. Chen, G. Hesser, G. Springholz

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.58 MB

english, 2009

132

Effect of Se/(Ga+In) ratio on MBE grown Cu(In,Ga)Se2 thin film solar cell

M.M. Islam, T. Sakurai, S. Ishizuka, A. Yamada, H. Shibata, K. Sakurai, K. Matsubara, S. Niki, K. Akimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 327 KB

english, 2009

133

Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

Shaoqiang Chen, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 298 KB

english, 2009

134

Chemical beam epitaxy of highly ordered network of tilted InP nanowires on silicon

G. Radhakrishnan, A. Freundlich, B. Fuhrmann

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 372 KB

english, 2009

135

High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 μm

H. Shao, A. Torfi, W. Li, D. Moscicka, W.I. Wang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 230 KB

english, 2009

136

The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells

A. Guzmán, E. Luna, F. Ishikawa, A. Trampert

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 827 KB

english, 2009

137

InN films and nanostructures grown on Si (1 1 1) by RF-MBE

A.O. Ajagunna, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, A. Georgakilas

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 713 KB

english, 2009

138

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Masaaki Ogawa, Xinhai Han, Zuoming Zhao, Yong Wang, Kang L. Wang, Jin Zou

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 926 KB

english, 2009

139

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

Akihiko Yoshikawa, Songbek Che, Yoshihiro Ishitani, Xinqiang Wang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.57 MB

english, 2009

140

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

X.Q. Shen, M. Shimizu, H. Okumura, F.J. Xu, B. Shen, G.Y. Zhang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.24 MB

english, 2009

141

Effect of the MgO substrate on the growth of GaN

R. Suzuki, A. Kawaharazuka, Y. Horikoshi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 523 KB

english, 2009

142

Growth of GaN with warm ammonia by molecular beam epitaxy

A. Kawaharazuka, T. Yoshizaki, K.H. Ploog, Y. Horikoshi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 584 KB

english, 2009

143

The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxy

S. Suraprapapich, Y.M. Shen, Y. Fainman, Y. Horikoshi, S. Panyakeow, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 426 KB

english, 2009

144

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

C. Skierbiszewski, Z.R. Wasilewski, I. Grzegory, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.13 MB

english, 2009

145

Structure and magnetic properties of Gd/Fe layers grown by MBE

H. Miyagawa, H. Shiraoka, M. Tani, K. Fujii, N. Takahashi, S. Koshiba, Y. Tanaka, N. Tsurumachi, S. Nakanishi, H. Itoh

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 969 KB

english, 2009

146

Fifteenth International Conference on molecular beam epitaxy: Vancouver, BC, Canada, August 7–14, 2008

Tom Tiedje, Charles W. Tu, Norman K.Y. Cheng, Gary Wicks

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 72 KB

english, 2009

147

Editor's preface

Z.R. Wasilewski, R. Beresford, J.A. Gupta

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 713 KB

english, 2009

148

Contents of The International Conference on Molecular Beam Epitaxy

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.57 MB

english, 2009

149

Author Index of MBE-XV

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.59 MB

english, 2009

150

Subject Index of MBE-XV

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.56 MB

english, 2009

151

Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (0 0 1) GaAs substrate

Shigeya Naritsuka, Shuji Matsuoka, Yuji Ishida, Takahiro Maruyama

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 480 KB

english, 2009

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