Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam...

Journal of Crystal Growth 2009 Vol. 311; Iss. 7

Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

C.A. Lin, T.D. Lin, T.H. Chiang, H.C. Chiu, P. Chang, M. Hong, J. Kwo
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Volume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.10.013
File:
PDF, 280 KB
english, 2009
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