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Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices
H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. BaribeauVolume:
311
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2008.10.052
File:
PDF, 517 KB
english, 2009