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MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates
K. Umeno, Y. Furukawa, A. Wakahara, R. Noma, H. Okada, H. Yonezu, Y. Takagi, H. KanVolume:
311
Year:
2009
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2008.10.075
File:
PDF, 489 KB
english, 2009