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GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
Y.H. Chang, H.C. Chiu, W.H. Chang, J. Kwo, C.C. Tsai, J.M. Hong, M. HongVolume:
311
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2008.11.011
File:
PDF, 282 KB
english, 2009