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Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. MassiesVolume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.11.066
File:
PDF, 420 KB
english, 2009