![](/img/cover-not-exists.png)
Hall effect and magnetoresistance analysis by electron–hole coexisting model in AlInSb/InAsSb quantum wells
T. Manago, N. Nisizako, S. Ishida, H. Geka, I. ShibasakiVolume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.11.082
File:
PDF, 496 KB
english, 2009