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Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy
Shaoqiang Chen, Jongwon Seo, Junji Sawahata, Katsuhiro AkimotoVolume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.12.007
File:
PDF, 298 KB
english, 2009