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High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 μm
H. Shao, A. Torfi, W. Li, D. Moscicka, W.I. WangVolume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.12.009
File:
PDF, 230 KB
english, 2009