Growth of GaN with warm ammonia by molecular beam epitaxy

Growth of GaN with warm ammonia by molecular beam epitaxy

A. Kawaharazuka, T. Yoshizaki, K.H. Ploog, Y. Horikoshi
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Volume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.12.024
File:
PDF, 584 KB
english, 2009
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