Low-temperature characteristics of the current gain of...

Journal of Crystal Growth 2009 Vol. 311; Iss. 10

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto
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Volume:
311
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2009.01.043
File:
PDF, 196 KB
english, 2009
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