Volume 311; Issue 10

Main
Journal of Crystal Growth
Volume 311; Issue 10

Journal of Crystal Growth

Volume 311; Issue 10

1

First principles studies on In-related nitride semiconductors

Teruaki Obata, Jun-ichi Iwata, Kenji Shiraishi, Atsushi Oshiyama

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 317 KB

english, 2009

2

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Akira Suzuki, Yu Bungi, Tsutomu Araki, Yasushi Nanishi, Yasuaki Mori, Hiroaki Yamamoto, Hiroshi Harima

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

3

Heteroepitaxial growth of InN layers on (1 1 1) silicon substrates

Qixin Guo, Masahiko Ogata, Yaliu Ding, Tooru Tanaka, Mitsuhiro Nishio

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 322 KB

english, 2009

4

MOVPE growth of InN buffer layers on sapphire

O. Briot, S. Ruffenach, M. Moret, B. Gil, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, M. Succi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 385 KB

english, 2009

5

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

M. Moret, B. Gil, S. Ruffenach, O. Briot, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, M. Succi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 304 KB

english, 2009

6

InN excitonic deformation potentials determined experimentally

B. Gil, M. Moret, O. Briot, S. Ruffenach, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, M. Succi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 249 KB

english, 2009

7

MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor

Quang Tu Thieu, Yuki Seki, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

8

Crystal growth of InN by MOCVD with electric field along the c-axis

Yuichi Ota, Ramkrishna Biswas, Masaaki Higo, Takashi Inushima

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 255 KB

english, 2009

9

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 423 KB

english, 2009

10

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 325 KB

english, 2009

11

Mg doping behavior of MOVPE InxGa1−xN (x∼0.4)

Md Rafiqul Islam, K. Sugita, M. Horie, A. Hashimoto, A. Yamamoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 240 KB

english, 2009

12

Electron-carrier generation by edge dislocations in InN films: First-principles study

Y. Takei, T. Nakayama

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 594 KB

english, 2009

13

Flow modulation effect on N incorporation into films during chemical beam epitaxy growth

H. Suzuki, K. Nishimura, K. Saito, Y. Ohshita, N. Kojima, M. Yamaguchi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 277 KB

english, 2009

14

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

Yoshitaka Taniyasu, Makoto Kasu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 446 KB

english, 2009

15

Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template

Yusuke Katagiri, Shinya Kishino, Kazuki Okuura, Hideto Miyake, Kazumasa Hiramatu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 286 KB

english, 2009

16

Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 362 KB

english, 2009

17

Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 °C

Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 317 KB

english, 2009

18

MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices

Jun Komiyama, Yoshihisa Abe, Shunichi Suzuki, Hideo Nakanishi, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 267 KB

english, 2009

19

Formation of AlN layer on (1 1 1)Al substrate by ammonia nitridation

Tohru Honda, Hiromi Yamamoto, Masashi Sawadaishi, Satoshi Taguchi, Kouki Sasaya

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 208 KB

english, 2009

20

AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate

R. Matsuoka, T. Okimoto, K. Nishino, Y. Naoi, S. Sakai

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 261 KB

english, 2009

21

Relaxation and recovery processes of AlxGa1−xN grown on AlN underlying layer

Toshiaki Asai, Kensuke Nagata, Toshiaki Mori, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 227 KB

english, 2009

22

Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0 0 0 1) substrates grown by MOCVD

X.Q. Shen, M. Shimizu, H. Okumura, F.J. Xu, B. Shen, G.Y. Zhang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 294 KB

english, 2009

23

Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

K.B. Lee, P.J. Parbrook, T. Wang, J. Bai, F. Ranalli, R.J. Airey, G. Hill

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 133 KB

english, 2009

24

Novel UV devices on high-quality AlGaN using grooved underlying layer

Hirotoshi Tsuzuki, Fumiaki Mori, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 357 KB

english, 2009

25

Growth and properties of semi-polar GaN on a patterned silicon substrate

Nobuhiko Sawaki, Toshiki Hikosaka, Norikatsu Koide, Shigeyasu Tanaka, Yoshio Honda, Masahito Yamaguchi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.07 MB

english, 2009

26

HVPE growth of semi-polar (1 1 2¯ 2)GaN on GaN template (1 1 3)Si substrate

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 661 KB

english, 2009

27

Growth and characterization of N-polar and In-polar InN films by RF-MBE

T. Yamaguchi, D. Muto, T. Araki, Y. Nanishi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

28

Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE

Kazuyoshi Tomita, Toshiki Hikosaka, Tetsu Kachi, Nobuhiko Sawaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 225 KB

english, 2009

29

One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 545 KB

english, 2009

30

Growth of InN films and nanostructures by MOVPE

O. Briot, S. Ruffenach, M. Moret, B. Gil, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, M. Succi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 607 KB

english, 2009

31

Alternative precursors for MOVPE growth of InN and GaN at low temperature

S. Ruffenach, M. Moret, O. Briot, B. Gil, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, M. Succi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 222 KB

english, 2009

32

Epitaxial lateral overgrowth on (2 1¯ 1¯ 0) a-plane GaN with [0 1¯ 1 1]-oriented stripes

T. Wernicke, U. Zeimer, C. Netzel, F. Brunner, A. Knauer, M. Weyers, M. Kneissl

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 539 KB

english, 2009

33

Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE

Bei Ma, Reina Miyagawa, Weiguo Hu, Da-Bing Li, Hideto Miyake, Kazumasa Hiramatsu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 2.04 MB

english, 2009

34

Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

Dabing Li, Bei Ma, Reina Miyagawa, Weiguo Hu, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 283 KB

english, 2009

35

Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (1 0 0) by MOVPE

D.R. Hang, Mitch M.C. Chou, Liuwen Chang, J.L. Lin, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 357 KB

english, 2009

36

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 196 KB

english, 2009

37

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Sheng-Po Chang, Shoou-Jinn Chang, Chien-Yuan Lu, Yu-Zung Chiou, Ricky W. Chuang, Hung-Chieh Lin

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 279 KB

english, 2009

38

Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Urban Forsberg, A. Lundskog, A. Kakanakova-Georgieva, R. Ciechonski, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 364 KB

english, 2009

39

Bulk GaN crystals grown by HVPE

Kenji Fujito, Shuichi Kubo, Hirobumi Nagaoka, Tae Mochizuki, Hideo Namita, Satoru Nagao

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 280 KB

english, 2009

40

Expansion ratio dependence of lattice vibration of GaN using ab initio molecular dynamics calculations

Kazuyuki Uno, Takuki Inoue, Toshiyuki Takizawa, Ichiro Tanaka

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 213 KB

english, 2009

41

Relationship between defects and optical properties in Er-doped GaN

Shaoqiang Chen, Akira Uedono, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 203 KB

english, 2009

42

Electron microscopy analysis of dislocation behavior in HVPE-AlGaN layer grown on a stripe-patterned (0 0 0 1) sapphire substrate

Noriyuki Kuwano, Yuta Kugiyama, Yutaka Nishikouri, Tadashige Sato, Akira Usui

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 514 KB

english, 2009

43

High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers

J.Q. Liu, J.F. Wang, Y.F. Liu, K. Huang, X.J. Hu, Y.M. Zhang, Y. Xu, K. Xu, H. Yang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 299 KB

english, 2009

44

Point defects in group-III nitride semiconductors studied by positron annihilation

A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

45

Bulk ammonothermal GaN

R. Dwiliński, R. Doradziński, J. Garczyński, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 311 KB

english, 2009

46

Nature of luminescence and strain in gallium nitride nanowires

M.A. Mastro, S. Maximenko, M. Gowda, B.S. Simpkins, P.E. Pehrsson, J.P. Long, A.J. Makinen, J.A. Freitas Jr., J.K. Hite, C.R. Eddy Jr., J. Kim

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 457 KB

english, 2009

47

Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (0 0 1) by MBE

JongUk Seo, Shigehiko Hasegawa, Hajime Asahi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 745 KB

english, 2009

48

Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates

Y.K. Su, J.J. Chen, C.L. Lin, S.M. Chen, W.L. Li, C.C. Kao

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 322 KB

english, 2009

49

Formation of gallium nitride particles during the two-stage chemical vapor process

Hironori Komoda, Tatsuhiro Mori, Hiroko Kominami, Yoichiro Nakanishi, Kazuhiko Hara

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 421 KB

english, 2009

50

Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns

Kei Kato, Katsumi Kishino, Hiroto Sekiguchi, Akihiko Kikuchi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 776 KB

english, 2009

51

Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxy

Yuri Sohn, Chinkyo Kim

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 391 KB

english, 2009

52

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Qian Sun, Yong Suk Cho, Bo Hyun Kong, Hyung Koun Cho, Tsung Shine Ko, Christopher D. Yerino, In-Hwan Lee, Jung Han

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 810 KB

english, 2009

53

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser, C. Wetzel

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 583 KB

english, 2009

54

InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

Yohjiro Kawai, Shinya Ohsuka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 545 KB

english, 2009

55

Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC

Tetsuya Matsubara, Ryota Senda, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 402 KB

english, 2009

56

Optical properties of MOVPE-grown a-plane GaN and AlGaN

Mitsuhisa Narukawa, Reina Miyagawa, Bei Ma, Hideto Miyake, Kazumasa Hiramatsu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 641 KB

english, 2009

57

Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Min Yang, Hyung Soo Ahn, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.31 MB

english, 2009

58

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, E.B. Yakimov, P.S. Vergeles, H. Amano, T. Kawashima

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 313 KB

english, 2009

59

Quality and thermal stability of thin InGaN films

Désirée Queren, Marc Schillgalies, Adrian Avramescu, Georg Brüderl, Ansgar Laubsch, Stephan Lutgen, Uwe Strauß

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 317 KB

english, 2009

60

Characterization of GaInN/GaN layers for green emitting laser diodes

C. Wetzel, Yufeng Li, J. Senawiratne, Mingwei Zhu, Yong Xia, S. Tomasulo, P.D. Persans, Lianghong Liu, D. Hanser, T. Detchprohm

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 544 KB

english, 2009

61

Crystal growth and characterization of GaCrN nanorods on Si substrate

H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, Y.K. Zhou, S. Emura, S. Hasegawa, H. Asahi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 292 KB

english, 2009

62

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

T. Ohachi, N. Yamabe, H. Shimomura, T. Shimamura, O. Ariyada, M. Wada

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 415 KB

english, 2009

63

Influence of substrate temperature on nitridation of (0 0 1) GaAs using RF-radical source

Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 501 KB

english, 2009

64

Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

Hsin-Hsiung Huang, Chu-Li Chao, Tung-Wei Chi, Yu-Lin Chang, Po-Chun Liu, Li-Wei Tu, Jenq-Dar Tsay, Hao-Chung Kuo, Shun-Jen Cheng, Wei-I Lee

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 352 KB

english, 2009

65

Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring

J.F. Wang, X.J. Hu, Y.M. Zhang, Y. Xu, H.B. Wang, B.S. Zhang, K. Xu, H. Yang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 339 KB

english, 2009

66

Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

Kuei-Ming Chen, Hsin-Hsiung Huang, Yi-Lin Kuo, Pei-Lun Wu, Ting-Li Chu, Hung-Wei Yu, Wei-I Lee

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 323 KB

english, 2009

67

Synthesis of GaN crystal by the reaction of Ga with Li3N in NH3 atmosphere

Takayoshi Hirano, Akira Mabuchi, Takashi Sugiura, Hideki Minoura

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

68

Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition

S. Mita, R. Collazo, Z. Sitar

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 314 KB

english, 2009

69

Nitridation of Si(1 1 1) for growth of 2H-AlN(0 0 0 1)/β-Si3N4 /Si(1 1 1) structure

N. Yamabe, H. Shimomura, T. Shimamura, T. Ohachi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 579 KB

english, 2009

70

Molecular beam epitaxial growth of hexagonal boron nitride on Ni(1 1 1) substrate

C.L. Tsai, Y. Kobayashi, T. Akasaka, M. Kasu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 871 KB

english, 2009

71

Homoepitaxy on bulk ammonothermal GaN

R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, M. Zajac, M. Rudzinski

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 446 KB

english, 2009

72

In situ gravimetric monitoring of surface reactions between sapphire and NH3

Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 163 KB

english, 2009

73

Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxy

Sanghwa Lee, Chinkyo Kim

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 356 KB

english, 2009

74

Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

Hitoshi Sasaki, Haruo Sunakawa, Norihiko Sumi, Kazutomi Yamamoto, Akira Usui

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 327 KB

english, 2009

75

Growth of undoped and Zn-doped GaN nanowires

Mitsuhisa Narukawa, Shinya Koide, Hideto Miyake, Kazumasa Hiramatsu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 292 KB

english, 2009

76

Theoretical investigation on the decomposition process of GaN(0 0 0 1) surface under a hydrogen atmosphere

Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 173 KB

english, 2009

77

A review of III-nitride research at the Center for Quantum Devices

M. Razeghi, R. McClintock

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 671 KB

english, 2009

78

HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice

Zhen-Yu Li, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Ming-Hua Lo, K.M. Lau

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1010 KB

english, 2009

79

An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions

Tomonori Ito, Toru Akiyama, Kohji Nakamura

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

80

Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

J.R. Grandusky, J.A. Smart, M.C. Mendrick, L.J. Schowalter, K.X. Chen, E.F. Schubert

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 393 KB

english, 2009

81

Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates

Dong-Sing Wuu, Hsueh-Wei Wu, Shih-Ting Chen, Tsung-Yen Tsai, Xinhe Zheng, Ray-Hua Horng

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 384 KB

english, 2009

82

MOVPE growth and properties of GaN on (1 1 1)Si using an AlInN intermediate layer

M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 548 KB

english, 2009

83

Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si

T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 469 KB

english, 2009

84

Theoretical approach to structural stability of GaN: How to grow cubic GaN

Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 348 KB

english, 2009

85

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

Fumio Kawamura, Masaki Tanpo, Naoya Miyoshi, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yasuo Kitaoka, Takatomo Sasaki

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 653 KB

english, 2009

86

GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy

F.R. Hu, H. Sameshima, M. Wakui, R. Ito, K. Hane

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 451 KB

english, 2009

87

Preface

Akinori Koukitu, Hiroshi Amano, Hiroshi Fujioka

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 61 KB

english, 2009

88

Author Index of ISGN-2

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.58 MB

english, 2009

89

Subject Index of ISGN-2

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.53 MB

english, 2009

90

List of Committee Members

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 60 KB

english, 2009