Overgrowth of GaN on Be-doped coalesced GaN nanocolumn...

Journal of Crystal Growth 2009 Vol. 311; Iss. 10

Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns

Kei Kato, Katsumi Kishino, Hiroto Sekiguchi, Akihiko Kikuchi
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Volume:
311
Year:
2009
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2009.01.057
File:
PDF, 776 KB
english, 2009
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