InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy
Yohjiro Kawai, Shinya Ohsuka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu AkasakiVolume:
311
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2009.01.061
File:
PDF, 545 KB
english, 2009