Growth of GaN single crystals with extremely low...

Journal of Crystal Growth 2009 Vol. 311; Iss. 10

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

Fumio Kawamura, Masaki Tanpo, Naoya Miyoshi, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yasuo Kitaoka, Takatomo Sasaki
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Volume:
311
Year:
2009
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2009.01.125
File:
PDF, 653 KB
english, 2009
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