Growth temperature dependence of strain relaxation during...

Journal of Crystal Growth 2011 Vol. 323; Iss. 1

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Takuo Sasaki, Hidetoshi Suzuki, Akihisa Sai, Masamitu Takahasi, Seiji Fujikawa, Itaru Kamiya, Yoshio Ohshita, Masafumi Yamaguchi
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Volume:
323
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2010.10.005
File:
PDF, 546 KB
english, 2011
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