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Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy
Takuo Sasaki, Hidetoshi Suzuki, Akihisa Sai, Masamitu Takahasi, Seiji Fujikawa, Itaru Kamiya, Yoshio Ohshita, Masafumi YamaguchiVolume:
323
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2010.10.005
File:
PDF, 546 KB
english, 2011