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Volume 323; Issue 1
Main
Journal of Crystal Growth
Volume 323; Issue 1
Journal of Crystal Growth
Volume 323; Issue 1
1
Crystallization of amorphous InAs/GaAs films on GaAs
R. Hey
,
P.V. Santos
,
E. Luna
,
T. Flissikowski
,
U. Jahn
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 706 KB
Your tags:
english, 2011
2
Power and temperature dependent magneto-photoluminescence of the asymmetric double layers of quantumdots
Hakjoon Lee
,
Taehee Yoo
,
Sanghoon Lee
,
M. Dobrowolska
,
J.K. Furdyna
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 361 KB
Your tags:
english, 2011
3
Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy
Takuo Sasaki
,
Hidetoshi Suzuki
,
Akihisa Sai
,
Masamitu Takahasi
,
Seiji Fujikawa
,
Itaru Kamiya
,
Yoshio Ohshita
,
Masafumi Yamaguchi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 546 KB
Your tags:
english, 2011
4
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
W.H. Chang
,
P. Chang
,
W.C. Lee
,
T.Y. Lai
,
J. Kwo
,
C.-H. Hsu
,
J.M. Hong
,
M. Hong
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 657 KB
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english, 2011
5
Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(0 0 1)
Hussein Mortada
,
Didier Dentel
,
Mickael Derivaz
,
Jean-Luc Bischoff
,
Emmanuel Denys
,
Reda Moubah
,
Corinne Ulhaq-Bouillet
,
Jacques Werckmann
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 738 KB
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english, 2011
6
Si doping of MBE grown bulk GaAsSb on InP
H. Detz
,
P. Klang
,
A.M. Andrews
,
W. Schrenk
,
G. Strasser
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 209 KB
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english, 2011
7
Controlled growth of exciton–polariton microcavities using in situ spectral reflectivity measurements
K. Biermann
,
E.A. Cerda-Méndez
,
M. Höricke
,
P.V. Santos
,
R. Hey
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 460 KB
Your tags:
english, 2011
8
The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
Chi-Che Tseng
,
Wei-Hsun Lin
,
Shung-Yi Wu
,
Shu-Han Chen
,
Shih-Yen Lin
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 220 KB
Your tags:
english, 2011
9
Growth and characterization of mid-infrared microdisk lasers operating in continuous-wave mode up to 2 °C
M. Eibelhuber
,
T. Schwarzl
,
S. Pichler
,
W. Heiss
,
G. Springholz
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 325 KB
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english, 2011
10
Metastable II–VI sulphides: Growth, characterization and stability
K.A. Prior
,
C. Bradford
,
I.A. Davidson
,
R.T. Moug
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 954 KB
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english, 2011
11
Cu-doped nitrides: Promising candidates for a nitride based spin-aligner
P.R. Ganz
,
G. Fischer
,
C. Sürgers
,
D.M. Schaadt
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 533 KB
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english, 2011
12
Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0 0 0 1)
Cunxu Gao
,
Oliver Brandt
,
Jonas Lähnemann
,
Jens Herfort
,
Hans-Peter Schönherr
,
Uwe Jahn
,
Bernd Jenichen
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 955 KB
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english, 2011
13
Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE
R. Schuber
,
Y.L. Chen
,
C.H. Shih
,
T.H. Huang
,
P. Vincze
,
I. Lo
,
L.W. Chang
,
Th. Schimmel
,
M.M.C. Chou
,
D.M. Schaadt
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 638 KB
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english, 2011
14
Effects of nano-pattern size on the property of InAs site-controlled quantum dots
Chien-Chia Cheng
,
K. Meneou
,
K.Y. Cheng
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 417 KB
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english, 2011
15
Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers
Takahiro Kitada
,
Tomoya Takahashi
,
Hyuga Ueyama
,
Ken Morita
,
Toshiro Isu
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 302 KB
Your tags:
english, 2011
16
Growth and characterization of InGaN by RF-MBE
A. Kraus
,
S. Hammadi
,
J. Hisek
,
R. Buß
,
H. Jönen
,
H. Bremers
,
U. Rossow
,
E. Sakalauskas
,
R. Goldhahn
,
A. Hangleiter
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 661 KB
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english, 2011
17
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
S.V. Novikov
,
C.R. Staddon
,
C.T. Foxon
,
F. Luckert
,
P.R. Edwards
,
R.W. Martin
,
A.J. Kent
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 238 KB
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english, 2011
18
Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (0 0 1) GaAs using MBE
Lien Tran
,
Fariba Hatami
,
W.T. Masselink
,
Jens Herfort
,
Achim Trampert
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 797 KB
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english, 2011
19
Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation
Zh.V. Smagina
,
P.L. Novikov
,
V.A. Zinovyev
,
V.A. Armbrister
,
S.A. Teys
,
A.V. Dvurechenskii
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 584 KB
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english, 2011
20
Growth and characterization of polar (0 0 0 1) and semipolar (1 1 −2 2) InGaN/GaN quantum dots
A. Das
,
P. Sinha
,
Y. Kotsar
,
P.K. Kandaswamy
,
G.P. Dimitrakopulos
,
Th. Kehagias
,
Ph. Komninou
,
G. Nataf
,
P. De Mierry
,
E. Monroy
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 627 KB
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english, 2011
21
Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy
C. Somaschini
,
S. Bietti
,
A. Fedorov
,
N. Koguchi
,
S. Sanguinetti
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 305 KB
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english, 2011
22
Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers
N. Samal
,
Y.G. Sadofyev
,
S. Annamalai
,
L. Chen
,
A. Samal
,
S.R. Johnson
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 259 KB
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english, 2011
23
High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
Wei-Sheng Liu
,
Hong-Ming Wu
,
Yu-Ann Liao
,
Jen-Inn Chyi
,
Wen-Yen Chen
,
Tzu-Min Hsu
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 476 KB
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english, 2011
24
Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs (0 0 1) grown using different As species
Ayami Takata
,
Ryuji Oshima
,
Yasushi Shoji
,
Kouichi Akahane
,
Yoshitaka Okada
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 369 KB
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english, 2011
25
Composition uniformity of site-controlled InAs/GaAs quantum dots
G. Biasiol
,
V. Baranwal
,
S. Heun
,
M. Prasciolu
,
M. Tormen
,
A. Locatelli
,
T.O. Mentes
,
M.A. Niño
,
L. Sorba
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 462 KB
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english, 2011
26
Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation
Christian Grasse
,
Simeon Katz
,
Gerhard Böhm
,
Augustinas Vizbaras
,
Ralf Meyer
,
Markus-Christian Amann
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 494 KB
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english, 2011
27
Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxy
Lorenzo Lugani
,
Daniele Ercolani
,
Fabio Beltram
,
Lucia Sorba
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 304 KB
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english, 2011
28
Room temperature absorption in laterally biased quantum infrared detectors fabricated by MBE regrowth
Álvaro Guzmán
,
Rocío San-Román
,
Adrián Hierro
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 625 KB
Your tags:
english, 2011
29
GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth
S. Vézian
,
B. Alloing
,
J. Zúñiga-Pérez
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 717 KB
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english, 2011
30
Growth and properties of self-assembled InP-nanoneedles on (0 0 1) InP by gas source MBE
M. Chashnikova
,
A. Mogilatenko
,
O. Fedosenko
,
V. Bryksa
,
A. Petrov
,
S. Machulik
,
M.P. Semtsiv
,
W. Neumann
,
W.T. Masselink
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 636 KB
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english, 2011
31
Suppression of interfacial intermixing between MBE-grown Heusler alloy Ni2MnIn and (0 0 1)InAs or InAs-HEMT structures
S. Bohse
,
A. Zolotaryov
,
W. Kreuzpaintner
,
D. Lott
,
A. Kornowski
,
A. Stemmann
,
Ch. Heyn
,
W. Hansen
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 564 KB
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english, 2011
32
Importance of kinetics effects in the growth of germanium nanowires by vapour–liquid–solid Molecular Beam Epitaxy
C. Porret
,
T. Devillers
,
A. Jain
,
R. Dujardin
,
A. Barski
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 920 KB
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english, 2011
33
(1 0 0) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires
K. Trunov
,
D. Reuter
,
A. Ludwig
,
J.C.H. Chen
,
O. Klochan
,
A.P. Micolich
,
A.R. Hamilton
,
A.D. Wieck
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 729 KB
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english, 2011
34
Role of buried cracks in mitigating strain in crack free GaN grown on Si (1 1 1) employing AlN interlayer schemes
H. Tang
,
J.-M. Baribeau
,
G.C. Aers
,
J. Fraser
,
S. Rolfe
,
J.A. Bardwell
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 935 KB
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english, 2011
35
Nucleation and growth of Au-assisted GaAs nanowires on GaAs(1 1 1)B and Si(1 1 1) in comparison
Steffen Breuer
,
Maria Hilse
,
Lutz Geelhaar
,
Henning Riechert
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 467 KB
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english, 2011
36
Power scalable 2.5 μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy
J. Paajaste
,
R. Koskinen
,
J. Nikkinen
,
S. Suomalainen
,
O.G Okhotnikov
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 460 KB
Your tags:
english, 2011
37
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film
H.Y. Hung
,
S.Y. Huang
,
P. Chang
,
W.C. Lin
,
Y.C. Liu
,
S.F. Lee
,
M. Hong
,
J. Kwo
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 635 KB
Your tags:
english, 2011
38
Molecular beam epitaxy of LiMnAs
V. Novák
,
M. Cukr
,
Z. Šobáň
,
T. Jungwirth
,
X. Martí
,
V. Holý
,
P. Horodyská
,
P. Němec
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 535 KB
Your tags:
english, 2011
39
MBE—Enabling technology beyond Si CMOS
P. Chang
,
W.C. Lee
,
T.D. Lin
,
C.H. Hsu
,
J. Kwo
,
M. Hong
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 953 KB
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english, 2011
40
VCSELs with monolithically integrated photodiodes for single-fiber bidirectional data transmission in the Gbit/s range
D. Wahl
,
A. Kern
,
M. Stach
,
F. Rinaldi
,
R. Rösch
,
R. Michalzik
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 876 KB
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english, 2011
41
Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy
J. Bubesh Babu
,
Kanji Yoh
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 592 KB
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english, 2011
42
Scaling the output power of quantum-cascade lasers with a number of cascades
O. Fedosenko
,
M. Chashnikova
,
S. Machulik
,
J. Kischkat
,
M. Klinkmüller
,
A. Aleksandrova
,
G. Monastyrskyi
,
M.P. Semtsiv
,
W.T. Masselink
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 254 KB
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english, 2011
43
Bandgap engineering of 1.3 μm quantum dot structures for terahertz (THz) emission
C.Y. Ngo
,
S.F. Yoon
,
J.H. Teng
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 268 KB
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english, 2011
44
Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate
Y.Y. Liang
,
S.F. Yoon
,
C.Y. Ngo
,
H. Tanoto
,
K.P. Chen
,
W.K. Loke
,
E.A. Fitzgerald
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 816 KB
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english, 2011
45
Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
A.M. Mizerov
,
V.N. Jmerik
,
M.A. Yagovkina
,
S.I. Troshkov
,
P.S. Kop'ev
,
S.V. Ivanov
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 758 KB
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english, 2011
46
Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices
A. Huggenberger
,
C. Schneider
,
C. Drescher
,
S. Heckelmann
,
T. Heindel
,
S Reitzenstein
,
M. Kamp
,
S. Höfling
,
L. Worschech
,
A. Forchel
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 797 KB
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english, 2011
47
Preparation characterization of MnSb–GaAs spin LED
T. Hanna
,
D. Yoshida
,
H. Munekata
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 553 KB
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english, 2011
48
InGaAs quantum dots embedded in DBR-coupled double cavity
T.E. Tzeng
,
K.Y. Chuang
,
Y.C. Liu
,
B.T. Tsuei
,
E.Y. Lin
,
T.S. Lay
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 834 KB
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english, 2011
49
Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature
C.Y. Ngo
,
S.F. Yoon
,
H. Tanoto
,
H.K. Hui
,
D.R. Lim
,
Vincent Wong
,
S.J. Chua
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 401 KB
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english, 2011
50
Growth and annealing of InAs quantum dots on pre-structured GaAs substrates
M. Helfrich
,
D.Z. Hu
,
J. Hendrickson
,
M. Gehl
,
D. Rülke
,
R. Gröger
,
D. Litvinov
,
S. Linden
,
M. Wegener
,
D. Gerthsen
,
T. Schimmel
,
M. Hetterich
,
H. Kalt
,
G. Khitrova
,
H.M. Gibbs
,
D.M. Schaadt
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 638 KB
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english, 2011
51
MBE growth of VCSELs for high volume applications
Roland Jäger
,
Michael C. Riedl
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 728 KB
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english, 2011
52
Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications
J. Fan
,
L. Ouyang
,
X. Liu
,
D. Ding
,
J.K. Furdyna
,
D.J. Smith
,
Y.-H. Zhang
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 721 KB
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english, 2011
53
Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots
J. Tommila
,
A. Tukiainen
,
J. Viheriälä
,
A. Schramm
,
T. Hakkarainen
,
A. Aho
,
P. Stenberg
,
M. Dumitrescu
,
M. Guina
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 516 KB
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english, 2011
54
Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy
S.N.M. Tawil
,
D. Krishnamurthy
,
R. Kakimi
,
S. Emura
,
S. Hasegawa
,
H. Asahi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 348 KB
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english, 2011
55
Interface engineering for improved growth of GaSb on Si(1 1 1)
Andre Proessdorf
,
Frank Grosse
,
Oleksandr Romanyuk
,
Wolfgang Braun
,
Bernd Jenichen
,
Achim Trampert
,
Henning Riechert
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 1.13 MB
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english, 2011
56
Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source
N. Ozaki
,
K. Takeuchi
,
S. Ohkouchi
,
N. Ikeda
,
Y. Sugimoto
,
K. Asakawa
,
R.A. Hogg
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 401 KB
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english, 2011
57
Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well system
K. Fujiwara
,
U. Jahn
,
E. Luna
,
H.T. Grahn
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 311 KB
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english, 2011
58
Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization
T. Alzoubi
,
M. Usman
,
M. Benyoucef
,
J.P. Reithmaier
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 1.43 MB
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english, 2011
59
X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy
Hai Lin
,
Yijie Huo
,
Yiwen Rong
,
Robert Chen
,
Theodore I. Kamins
,
James S. Harris
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 986 KB
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english, 2011
60
Comparison of InP- and GaSb-based VCSELs emitting at 2.3 μm suitable for carbon monoxide detection
Gerhard Boehm
,
Alexander Bachmann
,
Jürgen Rosskopf
,
Markus Ortsiefer
,
Jia Chen
,
Andreas Hangauer
,
Ralf Meyer
,
Rainer Strzoda
,
Markus-Christian Amann
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 335 KB
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english, 2011
61
GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire
F. Jabeen
,
G. Patriarche
,
F. Glas
,
J.-C. Harmand
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 520 KB
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62
Quantum dot lasers grown by gas source molecular-beam epitaxy
Q. Gong
,
P. Chen
,
S.G. Li
,
Y.F. Lao
,
C.F. Cao
,
C.F. Xu
,
Y.G. Zhang
,
S.L. Feng
,
C.H. Ma
,
H.L. Wang
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 262 KB
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63
Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire
Vladimir Petukhov
,
Andrey Bakin
,
Ioannis Tsiaoussis
,
Johan Rothman
,
Sergey Ivanov
,
John Stoemenos
,
Andreas Waag
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 307 KB
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64
Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
S. Kuboya
,
M. Kuroda
,
R. Katayama
,
K. Onabe
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 342 KB
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65
Effect of strain on the Dresselhaus effect of InAs-based heterostructures
Takashi Matsuda
,
Kanji Yoh
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 667 KB
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66
Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(0 0 1) by droplet epitaxy
P. Boonpeng
,
W. Jevasuwan
,
N. Nuntawong
,
S. Thainoi
,
S. Panyakeow
,
S. Ratanathammaphan
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 840 KB
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67
Self-assembled GaAs local artificial substrates on Si by droplet epitaxy
S. Bietti
,
C. Somaschini
,
N. Koguchi
,
C. Frigeri
,
S. Sanguinetti
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 329 KB
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68
Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation technique
Kouichi Akahane
,
Naokatsu Yamamoto
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 577 KB
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69
High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495 nm)
Meng Zhang
,
Animesh Banerjee
,
Pallab Bhattacharya
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 382 KB
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70
A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE
Julia Dobbert
,
Lien Tran
,
Fariba Hatami
,
Vasyl P. Kunets
,
Gregory J. Salamo
,
W. Ted Masselink
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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71
Photoreflectance study of GaMnAs layers grown by MBE
I. Martínez-Velis
,
R. Contreras-Guerrero
,
J.S. Rojas-Ramírez
,
M. Ramírez-López
,
S. Gallardo-Hernández
,
Y. Kudriatsev
,
C. Vázquez-López
,
S. Jiménez-Sandoval
,
V.-T. Rangel-Kuoppa
,
M. López-López
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 634 KB
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72
Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates
R.M. Kemper
,
M. Weinl
,
C. Mietze
,
M. Häberlen
,
T. Schupp
,
E. Tschumak
,
J.K.N. Lindner
,
K. Lischka
,
D.J. As
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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73
Carbon as an acceptor in cubic GaN/3C–SiC
A. Zado
,
E. Tschumak
,
J.W. Gerlach
,
K. Lischka
,
D.J. As
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 265 KB
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74
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
Yuxin Song
,
Shumin Wang
,
Xiaohui Cao
,
Zonghe Lai
,
Mahdad Sadeghi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 958 KB
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75
Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy
A. Kawaharazuka
,
K. Onomitsu
,
J. Nishinaga
,
Y. Horikoshi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 296 KB
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76
Lasing in compact microdisks with InAs quantum dots in a well structure
J.Y. Hsing
,
T.E. Tzeng
,
K.Y. Chuang
,
T.S. Lay
,
M.Y. Kuo
,
Y.Y. Tsai
,
K.S. Hsu
,
M.H. Shih
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 555 KB
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77
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate
V. Tokranov
,
P. Nagaiah
,
M. Yakimov
,
R.J. Matyi
,
S. Oktyabrsky
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 603 KB
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78
Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
T.D. Lin
,
P. Chang
,
Y.D. Wu
,
H.C. Chiu
,
J. Kwo
,
M. Hong
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 530 KB
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79
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
Teng Teng
,
Likun Ai
,
Anhuai Xu
,
Hao Sun
,
Fuying Zhu
,
Ming Qi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 1002 KB
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80
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(1 1 1) by molecular beam epitaxy
Pinar Dogan
,
Oliver Brandt
,
Carsten Pfüller
,
Anne-Kathrin Bluhm
,
Lutz Geelhaar
,
Henning Riechert
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 652 KB
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81
Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates
W. Tantiweerasophon
,
S. Thainoi
,
P. Changmuang
,
S. Kanjanachuchai
,
S. Rattanathammaphan
,
S. Panyakeow
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 664 KB
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82
Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substrates
A. Tukiainen
,
J. Tommila
,
A. Aho
,
A. Schramm
,
J. Viheriälä
,
R. Ahorinta
,
M. Dumitrescu
,
M. Pessa
,
M. Guina
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 833 KB
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83
Rare-earth oxide superlattices on Si(1 1 1)
Frank Grosse
,
Sergiy Bokoch
,
Steffen Behnke
,
Andre Proessdorf
,
Michael Niehle
,
Achim Trampert
,
Wolfgang Braun
,
Henning Riechert
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 477 KB
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84
GaSb quantum rings grown by metal organic molecular beam epitaxy
S. Odashima
,
S. Sakurai
,
M. Wada
,
I. Suemune
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 384 KB
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85
Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate
A. Ugur
,
F. Hatami
,
W.T. Masselink
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 865 KB
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86
Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy
Y. Kumagai
,
S. Imada
,
T. Baba
,
M. Kobayashi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 352 KB
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87
Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
C.A. Lin
,
H.C. Chiu
,
T.H. Chiang
,
Y.C. Chang
,
T.D. Lin
,
J. Kwo
,
W.-E. Wang
,
J. Dekoster
,
M. Heyns
,
M. Hong
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 693 KB
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88
Nano-clustered Pd catalysts formed on GaN surface for green chemistry
Motoi Hirayama
,
Yukiko Ueta
,
Tomoya Konishi
,
Shiro Tsukamoto
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 596 KB
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89
Sixteenth International Conference on Molecular Beam Epitaxy: Berlin, Germany, August 22–27, 2010
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 74 KB
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90
Editor's preface
Lutz Geelhaar
,
Christian Heyn
,
Andreas D. Wieck
Journal:
Journal of Crystal Growth
Year:
2011
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english
File:
PDF, 593 KB
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91
Editorial Board
Journal:
Journal of Crystal Growth
Year:
2011
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english
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92
Contents
Journal:
Journal of Crystal Growth
Year:
2011
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english
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PDF, 119 KB
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93
Author index
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 481 KB
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94
Subject index
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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95
Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications
A. Ludwig
,
R. Roescu
,
A.K. Rai
,
K. Trunov
,
F. Stromberg
,
M. Li
,
H. Soldat
,
A. Ebbing
,
N.C. Gerhardt
,
M.R. Hofmann
,
H. Wende
,
W. Keune
,
D. Reuter
,
A.D. Wieck
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 358 KB
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96
InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infrared
V. Liverini
,
A. Bismuto
,
L. Nevou
,
M. Beck
,
F. Gramm
,
E. Müller
,
J. Faist
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 654 KB
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97
Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods
H. Tambo
,
S. Hasegawa
,
H. Kameoka
,
Y.K. Zhou
,
S. Emura
,
H. Asahi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 466 KB
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98
On the growth of InAs nanowires by molecular beam epitaxy
Faustino Martelli
,
Silvia Rubini
,
Fauzia Jabeen
,
Laura Felisari
,
Vincenzo Grillo
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 899 KB
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99
Optical characterization of isoelectronic ZnSe1−xOx semiconductors
Y.C. Lin
,
H.L. Chung
,
J.T. Ku
,
C.Y. Chen
,
K.F. Chien
,
W.C. Fan
,
L. Lee
,
J.I. Chyi
,
W.C. Chou
,
W.H. Chang
,
W.K. Chen
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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100
CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and μ-PL characterisation
I.A. Davidson
,
R.T. Moug
,
P.A. Dalgarno
,
C. Bradford
,
R.J. Warburton
,
K.A. Prior
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 588 KB
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101
Strain in GaAs–MnAs core–shell nanowires grown by molecular beam epitaxy
M. Hilse
,
Y. Takagaki
,
M. Ramsteiner
,
J. Herfort
,
S. Breuer
,
L. Geelhaar
,
H. Riechert
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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102
Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount
Naraporn Pankaow
,
Supachok Thainoi
,
Somsak Panyakeow
,
Somchai Ratanathammaphan
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 515 KB
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103
Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature
M. Hassan
,
G. Springholz
,
R.T. Lechner
,
H. Groiss
,
R. Kirchschlager
,
G. Bauer
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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104
X-ray study of antiphase domains and their stability in MBE grown GaP on Si
A. Létoublon
,
W. Guo
,
C. Cornet
,
A. Boulle
,
M. Véron
,
A. Bondi
,
O. Durand
,
T. Rohel
,
O. Dehaese
,
N. Chevalier
,
N. Bertru
,
A. Le Corre
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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105
Mechanism and applications of local droplet etching
Ch. Heyn
,
A. Stemmann
,
M. Klingbeil
,
Ch. Strelow
,
T. Köppen
,
S. Mendach
,
W. Hansen
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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106
Gas source MBE grown Al0.52In0.48P photovoltaic detector
C. Li
,
Y.G. Zhang
,
Y. Gu
,
K. Wang
,
A.Z. Li
,
Hsby Li
,
X.M. Shao
,
J.X. Fang
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 310 KB
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107
Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices
S.V. Novikov
,
C.R. Staddon
,
C.T. Foxon
,
K.M. Yu
,
R. Broesler
,
M. Hawkridge
,
Z. Liliental-Weber
,
J. Denlinger
,
I. Demchenko
,
F. Luckert
,
P.R. Edwards
,
R.W. Martin
,
W. Walukiewicz
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 627 KB
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108
Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum well
Fumitaro Ishikawa
,
Masato Morifuji
,
Kenichi Nagahara
,
Masayuki Uchiyama
,
Kotaro Higashi
,
Masahiko Kondow
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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109
Growth and characterization of C60/GaAs interfaces and C60 doped GaAs
Jiro Nishinaga
,
Yoshiji Horikoshi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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110
Magneto-optical properties of ZnMnTe/ZnSe quantum dots
W.C. Fan
,
J.T. Ku
,
W.C. Chou
,
W.K. Chen
,
W.H. Chang
,
C.S. Yang
,
C.H. Chia
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 316 KB
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111
Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layer
Koichiro Ueno
,
Edson Gomes Camargo
,
Tomohiro Morishita
,
Yoshitaka Moriyasu
,
Hiromasa Goto
,
Naohiro Kuze
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 512 KB
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112
Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates
P. Novikov
,
J. Smagina
,
D. Vlasov
,
A. Deryabin
,
A. Kozhukhov
,
A. Dvurechenskii
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 657 KB
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113
Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption
Y. Kotsar
,
P.K. Kandaswamy
,
A. Das
,
E. Sarigiannidou
,
E. Bellet-Amalric
,
E. Monroy
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 524 KB
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114
Bimodal optical characteristics of lateral InGaAs quantum dot molecules
N. Thongkamkoon
,
N. Patanasemakul
,
N. Siripitakchai
,
S. Thainoi
,
S. Panyakeow
,
S. Kanjanachuchai
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 388 KB
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115
In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy
W. Priyantha
,
G. Radhakrishnan
,
R. Droopad
,
M. Passlack
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
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116
MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (1 1 1)Si substrates
Jihyun Paek
,
Masahito Yamaguchi
,
Hiroshi Amano
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 346 KB
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117
Selective growth of InSb on localized area of Si(1 0 0) by molecular beam epitaxy
Shinsuke Hara
,
Tomoaki Iida
,
Yuichi Nishino
,
Akinori Uchida
,
Hiroyuki Horii
,
Hiroki I. Fujishiro
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 886 KB
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118
InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy
Wipakorn Jevasuwan
,
Poonyasiri Boonpeng
,
Supachok Thainoi
,
Somsak Panyakeow
,
Somchai Ratanathammaphan
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 810 KB
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119
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5–2.7 μm
Kristijonas Vizbaras
,
Alexander Bachmann
,
Shamsul Arafin
,
Kai Saller
,
Stefan Sprengel
,
Gerhard Boehm
,
Ralf Meyer
,
Markus-Christian Amann
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 496 KB
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120
Optical and structural properties of Pb1−xEuxTe/CdTe//GaAs (0 0 1) heterostructures grown by MBE
E. Smajek
,
M. Szot
,
L. Kowalczyk
,
V. Domukhovski
,
B. Taliashvili
,
P. Dziawa
,
W. Knoff
,
E. łusakowska
,
A. Reszka
,
B. Kowalski
,
M. Wiater
,
T. Wojtowicz
,
T. Story
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 528 KB
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121
Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis
M. den Hertog
,
M. Elouneg-Jamroz
,
E. Bellet-Amalric
,
S. Bounouar
,
C. Bougerol
,
R. André
,
Y. Genuist
,
J.P. Poizat
,
K. Kheng
,
S. Tatarenko
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 877 KB
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122
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)
A. Fissel
,
J. Krügener
,
H.J. Osten
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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PDF, 1.34 MB
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123
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
M. Richter
,
C. Rossel
,
D.J. Webb
,
T. Topuria
,
C. Gerl
,
M. Sousa
,
C. Marchiori
,
D. Caimi
,
H. Siegwart
,
P.M. Rice
,
J. Fompeyrine
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
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english, 2011
124
Nano-crystalline Sb-based compound semiconductor formed on silicon
Naokatsu Yamamoto
,
Kouichi Akahane
,
Tetsuya Kawanishi
,
Hideyuki Sotobayashi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 564 KB
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english, 2011
125
New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range
S. Ohkouchi
,
N. Kumagai
,
M. Shirane
,
Y. Igarashi
,
M. Nomura
,
Y. Ota
,
S. Yorozu
,
S. Iwamoto
,
Y. Arakawa
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 1.31 MB
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english, 2011
126
Area selective epitaxy of InAs on GaAs(0 0 1) and GaAs(1 1 1)A by migration enhanced epitaxy
M. Zander
,
J. Nishinaga
,
K. Iga
,
Y. Horikoshi
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 671 KB
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english, 2011
127
RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(0 0 1) substrates
M. Kakuda
,
S. Kuboya
,
K. Onabe
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 253 KB
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english, 2011
128
Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation
T. Schupp
,
T. Meisch
,
B. Neuschl
,
M. Feneberg
,
K. Thonke
,
K. Lischka
,
D.J. As
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 599 KB
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english, 2011
129
Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 μm with low optical degradation
M.J. Milla
,
A. Guzmán
,
R. Gargallo-Caballero
,
J.M. Ulloa
,
A. Hierro
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 754 KB
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english, 2011
130
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
Yu Cao
,
Kejia Wang
,
Guowang Li
,
Tom Kosel
,
Huili Xing
,
Debdeep Jena
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 722 KB
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english, 2011
131
Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrate
Hirotaka Geka
,
Satoshi Yamada
,
Masato Toita
,
Kazuhiro Nagase
,
Naohiro Kuze
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 265 KB
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english, 2011
132
InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation
S. Fretheim Thomassen
,
T. Worren Reenaas
,
B.O. Fimland
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 763 KB
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english, 2011
133
InGaAs self-assembly quantum dot for high-speed 1300 nm electroabsorption modulator
Chuan-Han Lin
,
Jui-pin Wu
,
Yu-zheng Kuo
,
Yi-jen Chiu
,
T.E. Tzeng
,
T.S. Lay
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 422 KB
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english, 2011
134
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy
A. Urbańczyk
,
G.J. Hamhuis
,
R. Nötzel
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 521 KB
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english, 2011
135
Growth of low defect AlGaSb films on Si (1 0 0) using AlSb and InSb quantum dots intermediate layers
Young Kyun Noh
,
Moon Deock Kim
,
Jae Eung Oh
,
Woo Chul Yang
,
Young Heon Kim
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 475 KB
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english, 2011
136
Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(0 0 1)
Itaru Kamiya
,
Takeo Shirasaka
,
Kenichi Shimomura
,
David M. Tex
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 1019 KB
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english, 2011
137
Photovoltaic response of coupled InGaAs quantum dots
K.Y. Chuang
,
T.E. Tzeng
,
Y.C. Liu
,
K.D. Tzeng
,
T.S. Lay
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 588 KB
Your tags:
english, 2011
138
InP-based mid-infrared quantum-cascade laser grown on pre-patterned wafer
O. Fedosenko
,
M. Chashnikova
,
S. Machulik
,
J. Kischkat
,
M. Klinkmüller
,
A. Aleksandrova
,
G. Monastyrskyi
,
M.P. Semtsiv
,
T.W. Masselink
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 307 KB
Your tags:
english, 2011
139
Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSb
Shin-ichiro Gozu
,
Teruo Mozume
,
Hiroshi Ishikawa
Journal:
Journal of Crystal Growth
Year:
2011
Language:
english
File:
PDF, 354 KB
Your tags:
english, 2011
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