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Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers
Takahiro Kitada, Tomoya Takahashi, Hyuga Ueyama, Ken Morita, Toshiro IsuVolume:
323
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2010.10.120
File:
PDF, 302 KB
english, 2011