Growth and characterization of InGaN by RF-MBE

Journal of Crystal Growth 2011 Vol. 323; Iss. 1

Growth and characterization of InGaN by RF-MBE

A. Kraus, S. Hammadi, J. Hisek, R. Buß, H. Jönen, H. Bremers, U. Rossow, E. Sakalauskas, R. Goldhahn, A. Hangleiter
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Volume:
323
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2010.10.124
File:
PDF, 661 KB
english, 2011
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