Analysis of dark current dependent upon threading...

Microelectronics International 2012 / 07 Vol. 29; Iss. 3

Analysis of dark current dependent upon threading dislocations in Ge/Si heterojunction photodetectors

Wei, Ying, Cai, Xueyuan, Ran, Jinzhi, Yang, Jianhong
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Volume:
29
Language:
english
Journal:
Microelectronics International
DOI:
10.1108/13565361211252881
Date:
July, 2012
File:
PDF, 300 KB
english, 2012
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