Volume 29; Issue 3

Microelectronics International

Volume 29; Issue 3

1

A new time‐dependent mobility degradation model for MOS transistors

Özcelep, Yasin, Kuntman, Ayten

Journal:

Microelectronics International

Year:

2012

Language:

english

File:

PDF, 129 KB

english, 2012

2

Structural and impedance spectroscopy study of Al‐doped ZnO nanorods grown by sol‐gel method

Kashif, Muhammad, Hashim, Uda, Ali, Eaqub, Saif, Ala'eddin A., Muhammad Usman Ali, Syed, Willander, Magnus

Journal:

Microelectronics International

Year:

2012

Language:

english

File:

PDF, 188 KB

english, 2012

3

Analysis of dark current dependent upon threading dislocations in Ge/Si heterojunction photodetectors

Wei, Ying, Cai, Xueyuan, Ran, Jinzhi, Yang, Jianhong

Journal:

Microelectronics International

Year:

2012

Language:

english

File:

PDF, 300 KB

english, 2012

4

Finite element modeling of channel sag in LTCC

Horvath, Eszter, Henap, Gabor, Harsanyi, Gabor

Journal:

Microelectronics International

Year:

2012

Language:

english

File:

PDF, 347 KB

english, 2012

5

A dual‐band voltage‐controlled oscillator in 0.13 μ m CMOS technology

Maisurah Mohd Hassan, Siti, Azmi Ismail, Mohd, Emran Farid, Nazif, Fadhil Idham Muhammad, Norman, Ismat Abdul Rahim, Ahmad

Journal:

Microelectronics International

Year:

2012

Language:

english

File:

PDF, 620 KB

english, 2012

6

Analysis of warpage and residual stress in plastic ball grid array package after post mold cure

Yi, Sung, Lam, Tatiana M.

Journal:

Microelectronics International

Year:

2012

Language:

english

File:

PDF, 445 KB

english, 2012