TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON...

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON

TROEGER, R. T., ADAM, T. N., RAY, S. K., LV, P.-C., KIM, S., KOLODZEY, J.
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S012915640400265X
Date:
September, 2004
File:
PDF, 314 KB
english, 2004
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